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Your search keyword '"Lin, Jianqiang"' showing total 362 results
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362 results on '"Lin, Jianqiang"'

4. Strongly correlated proton-doped perovskite nickelate memory devices

Author

Ramadoss, Koushik, Zuo, Fan, Sun, Yifei, Zhang, Zhen, Lin, Jianqiang, Bhaskar, Umesh, Shin, SangHoon, Alam, Muhammad Ashraful, Guha, Supratik, Weinstein, Dana, and Ramanathan, Shriram

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing., Comment: 4 figures

Published
2018

22. Cramér-Rao Lower Bound Analysis of Positioning With Planar Large Intelligent Surfaces Under Rician Channel

Author

Lin, Jianqiang, Jing, Yindi, and Yu, Xinwei

Abstract

In this paper we derive the Fisher information matrix (FIM) and Cramér-Rao lower bound (CRLB) for positioning a terminal with a planar large intelligent surface (LIS), under Rician channel. For a disk-shaped continuous LIS and a terminal located on the central perpendicular line (CPL) of the LIS, we obtain expressions for the CRLBs in the form of a single integration. For the situation that the terminal is far from the LIS compared to the LIS radius and the situation with an asymptotically large LIS, closed-form approximations of the CRLBs are derived, based on which scalings and properties of the positioning precision with respect to different system parameters are obtained. For positioning a terminal with arbitrary location, we derive closed-form expressions of the CRLBs when the terminal is far from the LIS and the wavelength is small. When the surface area is small and the path-loss exponent is not larger than 5, the CRLBs of a CPL-terminal are smaller than those of a non-CPL terminal for all three dimensions, while the reverse may occur when the surface area grows large enough. We also carry out a comparative study of the continuous and discrete models of the LIS. Numerical results are presented to validate the precision of our theoretical analysis and approximated performance.

Published
2024
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26. Effects of Oxygen Limitation on Xylose Fermentation, Intracellular Metabolites, and Key Enzymes of Neurospora crassa AS3.1602

Author

Zhang, Zhihua, Qu, Yinbo, Zhang, Xiao, Lin, Jianqiang, Mulchandani, Ashok, editor, Aizawa, M., editor, Arnold, M. A., editor, Bachas, L., editor, Bachmann, T. T., editor, Belkin, S., editor, Blanch, Harvey W., editor, Cha, H. J., editor, Chuan-Ling, Q., editor, Da Silva, Nancy A., editor, DeLisa, M., editor, Deshusses, M., editor, Dordick, J. S., editor, Eldefrawi, M. E., editor, Gu, M. B., editor, Jain, R. K., editor, Karanth, N. G., editor, Kelly, R., editor, Klibanov, A. M., editor, Krull, U. J., editor, Ladish, M. R., editor, Lee, K., editor, Lee, Y. Y., editor, Ligler, F. S., editor, Linhardt, R., editor, Pandey, A., editor, Pishko, M., editor, Renugopalakrishnan, V., editor, Ryu, D., editor, Seibert, M., editor, Tan, W., editor, Ueda, Mitsuyoshi, editor, Varfolomeyev, S. D., editor, Xu, J. -H., editor, Wang, P., editor, Wyman, C. E., editor, Zhao, H., editor, Chen, Wilfred, editor, Csoregi, Elisabeth, editor, Murhammer, David W., editor, Singh, Anup K., editor, Mulchandaui, Priti, editor, Adney, William S., editor, McMillan, James D., editor, Mielenz, Jonathan, editor, and Klasson, K. Thomas, editor

Published
2008
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34. Melatonin prevents experimental central serous chorioretinopathy in rats

Author

Yu, Shanshan, primary, Cui, Kaixuan, additional, Wu, Peiqi, additional, Wu, Benjuan, additional, Lu, Xi, additional, Huang, Rong, additional, Tang, Xiaoyu, additional, Lin, Jianqiang, additional, Yang, Boyu, additional, Zhao, Jinfeng, additional, He, Qingjing, additional, Liang, Xiaoling, additional, and Xu, Yue, additional

Published
2022
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36. Incidence, causes and risk factors of vision loss in rural Southern China: 6-year follow-up of the Yangxi Eye Study

Author

Zhao, Xinyu, primary, Lin, Jianqiang, additional, Yu, Shanshan, additional, Xie, Liqiong, additional, Jin, Ling, additional, Xiong, Kun, additional, Tsui, Ching-Kit, additional, Xu, Yue, additional, Wu, Benjuan, additional, Liu, Bin, additional, Wang, Wei, additional, Congdon, Nathan, additional, Huang, Wenyong, additional, He, Mingguang, additional, and Liang, Xiaoling, additional

Published
2022
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43. The Essential Role of OmpR in Acidithiobacillus caldus Adapting to the High Osmolarity and Its Regulation on the Tetrathionate-Metabolic Pathway.

Author

Chen, Linxu, Liu, Xiao, Gao, Chang, Guan, Yanan, Lin, Jianqiang, Liu, Xiangmei, and Pang, Xin

Subjects
OSMOTIC pressure, ACID mine drainage, ESCHERICHIA coli, METABOLIC regulation, SULFUR metabolism, OSMOLAR concentration, SULFUR bacteria
Abstract

Acidithiobacillus spp. are prevalent in acid mine drainage, and they have been widely used in biomining for extracting nonferrous metals from ores. The osmotic stress generated by elevated concentrations of inorganic ions is a severe challenge for the growth of Acidithiobacillus spp. in the bioleaching process; however, the adaptation mechanism of these bacteria to high osmotic pressure remains unclear. In this study, bioinformatics analysis indicated that the osmotic stress response two-component system EnvZ-OmpR is widely distributed in Acidithiobacillus spp., while OmpRs from Acidithiobacillus spp. exhibited a far more evolutionary relationship with the well-studied OmpRs in E. coli and Salmonella typhimurium. The growth measurement of an Acidithiobacillus caldus (A. caldus) ompR-knockout strain demonstrated that OmpR is essential in the adaptation of this bacterium to high osmotic stress. The overall impact of OmpR on the various metabolic and regulatory systems of A. caldus was revealed by transcriptome analysis. The OmpR binding sequences of differentially expressed genes (DEGs) were predicted, and the OmpR box motif in A. caldus was analysed. The direct and negative regulation of EnvZ-OmpR on the tetrathionate-metabolic (tetH) cluster in A. caldus was discovered for the first time, and a co-regulation mode mediated by EnvZ-OmpR and RsrS-RsrR for the tetrathionate intermediate thiosulfate-oxidizing (S4I) pathway in this microorganism was proposed. This study reveals that EnvZ-OmpR is an indispensable regulatory system for the ability of A. caldus to cope with high osmotic stress and the significance of EnvZ-OmpR on the regulation of sulfur metabolism in A. caldus adapting to the high-salt environment. [ABSTRACT FROM AUTHOR]

Published
2023
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46. Nanometer-Scale III-V MOSFETs

Author

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Del Alamo, Jesus A, Antoniadis, Dimitri A, Lin, Jianqiang, Lu, Wenjie, Vardi, Alon, Zhao, Xin, Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Del Alamo, Jesus A, Antoniadis, Dimitri A, Lin, Jianqiang, Lu, Wenjie, Vardi, Alon, and Zhao, Xin

Abstract

© 2013 IEEE. After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over Si offer the potential for device scaling to nanometer dimensions and continued progress. Among new channel materials, III-V compound semiconductors are particularly promising. InGaAs is currently the most attractive candidate for future III-V based n-type MOSFETs while InGaSb is of great interest for p-channel MOSFETs. At the point of most likely deployment, devices based on these semiconductors will have a highly three-dimensional architecture. This paper reviews recent progress toward the development of nanoscale III-V MOSFETs based on InGaAs and InGaSb with emphasis on scalable technologies and device architectures and relevant physics. Progress in recent times has been brisk but much work remains to be done before III-V CMOS can become a reality.

Published
2021

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