Search

Your search keyword '"Lou, Jyun-Hao"' showing total 5 results
Start Over Author "Lou, Jyun-Hao" Publication Year Range Last 50 years
5 results on '"Lou, Jyun-Hao"'

2. Atomic-level quantized reaction of HfOx memristor

Author

Syu, Yong-En, primary, Chang, Ting-Chang, additional, Lou, Jyun-Hao, additional, Tsai, Tsung-Ming, additional, Chang, Kuan-Chang, additional, Tsai, Ming-Jinn, additional, Wang, Ying-Lang, additional, Liu, Ming, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

3. Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

Author

Chu, Tian-Jian, primary, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Wu, Hsing-Hua, additional, Chen, Jung-Hui, additional, Chang, Kuan-Chang, additional, Young, Tai-Fa, additional, Chen, Kai-Hsang, additional, Syu, Yong-En, additional, Chang, Geng-Wei, additional, Chang, Yao-Feng, additional, Chen, Min-Chen, additional, Lou, Jyun-Hao, additional, Pan, Jhih-Hong, additional, Chen, Jian-Yu, additional, Tai, Ya-Hsiang, additional, Ye, Cong, additional, Wang, Hao, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

5. Asymmetric Carrier Conduction Mechanism by Tip Electric Field in \WSiOX Resistance Switching Device.

Author

Syu, Yong-En, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Geng-Wei, Chang, Kuan-Chang, Lou, Jyun-Hao, Tai, Ya-Hsiang, Tsai, Ming-Jinn, Wang, Ying-Lang, and Sze, Simon M.

Subjects
ELECTRIC conductivity, ELECTRIC fields, RANDOM access memory, SILICON compounds, SWITCHING theory, CURRENT-voltage characteristics, INTERFACES (Physical sciences), ELECTRODES
Abstract

Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current–voltage ( I–V) curve fitting in the \TiN/WSiOX\/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator. [ABSTRACT FROM AUTHOR]

Published
2012
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results