16 results on '"Ng, Yat Hon"'
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2. HyFET—A GaN/SiC Hybrid Field-Effect Transistor
3. Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure
4. Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT
5. RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates
6. Linearity Characterization of Enhancement-Mode p-GaN Gate Radio-Frequency HEMT
7. Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation
8. Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors
9. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC
10. A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
11. SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs
12. Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs
13. Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs
14. Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-typep-GaN gate HEMTs
15. RF Enhancement-Mode -GaN Gate HEMT on 200 mm-Si Substrates<italic/>
16. Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs.
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