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Here, we show that GaN nanowires (diameter <30 nm) can be used as strain relaxing substrates for the heteroepitaxial growth of stable In(x)Ga(1-x)N alloys of controlled composition and thickness. Thinner nanowires with their smaller interfacial area reduce the heteroepitaxial stress. Also, the limited adatom diffusion length scales on the thinner nanowires aid in reducing the kinetic segregation effects. In addition to being single crystal templates for heteroepitaxial growth, these thick single crystal overlayers on nanowire substrates can provide suitable architectures for photoelectrochemical applications. The stability and crystallinity of the In(x)Ga(1-x)N layers are preserved by the nanowires acting as compliant substrates. Photoelectrochemical water splitting requires In(x)Ga(1-x)N alloys with a 2.2-1.6 eV band gap (i.e. 0.45 < x < 0.65) and 150-200 nm film thickness for efficient light absorption and carrier generation. At such compositions, the In(x)Ga(1-x)N alloys are inherently unstable, the thickness-dependent stress builds up during the commonly employed heteroepitaxial growth methods, and adds to the instability causing phase segregation and property degradation. A dependence of the growth morphology on the GaN nanowire growth orientation was observed and a growth mechanism is presented for the observed orientation dependent growth on a-plane and c-plane GaN nanowires. Photoactivity of GaN and In(x)Ga(1-x)N films on GaN nanowires is also investigated which shows a distinct difference attributable to GaN and In(x)Ga(1-x)N, demonstrating the advantages of using nanowires as strain relaxing substrates.

In this report, we present a simple and generic concept involving metal nanoclusters supported on metal oxide nanowires as stable and high capacity anode materials for Li-ion batteries. Specifically, SnO(2) nanowires covered with Sn nanoclusters exhibited an exceptional capacity of >800 mAhg(-1) over hundred cycles with a low capacity fading of less than 1% per cycle. Post lithiation analyses after 100 cycles show little morphological degradation of the hybrid nanowires. The observed, enhanced stability with high capacity retention is explained with the following: (a) the spacing between Sn nanoclusters on SnO(2) nanowires allowed the volume expansion during Li alloying and dealloying; (b) high available surface area of Sn nanoclusters for Li alloying and dealloying; and (c) the presence of Sn nanoclusters on SnO(2) allowed reversible reaction between Sn and Li(2)O to produce both Sn and SnO phases.

Charge transfer between diamond and an electrochemical redox couple in an adsorbed water film has recently been shown to pin the Fermi level in hydrogen-terminated diamond. Here we show that this effect is a more general phenomenon and influences the properties of other semiconductors when the band lineup between the ambient and electronic states in the semiconductor is appropriate. We find that the luminescent intensities from GaN and ZnO change in different, but predictable, ways when exposed to HCl and NH3 vapors in humid air. The effect is reversible and has been observed on single crystals, nanowires, flakes, and powders. These observations are explained by electron exchange between the oxygen electrochemical redox couple in an adsorbed water film and electronic states in the semiconductor. This effect can take place in parallel with other processes such as defect formation, chemisorption, and surface reconstruction and may play an important, but previously unrecognized, role when electronic and optical measurements are made in air.