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Your search keyword '"Shao, Siwu"' showing total 29 results
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29 results on '"Shao, Siwu"'

18. High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Author

Zhu, Xiaohua, primary, Shao, Siwu, additional, Chan, Siyi, additional, Tu, Juping, additional, Ota, Kosuke, additional, Huang, Yabo, additional, An, Kang, additional, Chen, Liangxian, additional, Wei, Junjun, additional, Liu, Jinlong, additional, Li, Chengming, additional, and Kawarada, Hiroshi, additional

Published
2023
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19. 光学级多晶金刚石膜的快速生长

Author

Chan Siyi, 产思义, primary, Tu Juping, 屠菊萍, additional, Huang Ke, 黄珂, additional, Shao Siwu, 邵思武, additional, Liu Peng, 刘鹏, additional, Yang Zhiliang, 杨志亮, additional, Liu Jinglong, 刘金龙, additional, Chen Liangxian, 陈良贤, additional, Wei Junjun, 魏俊俊, additional, Zheng Yuting, 郑宇亭, additional, and Li Chengming, 李成明, additional

Published
2023
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25. −400 mA mm −1 Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs.

Author

Zhu, Xiaohua, Shao, Siwu, Chang, Yuhao, Zhang, Runming, Chung, Sylvia Yuk Yee, Fu, Yu, Bi, Te, Huang, Yabo, An, Kang, Liu, Jinlong, Li, Chengming, and Kawarada, Hiroshi

Subjects
METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, DIAMONDS, OHMIC contacts, OHMIC resistance, THRESHOLD voltage
Abstract

This letter reports a high drain current density and normally-off operation metal-oxide-semiconductor field-effect transistors (MOSFETs) with a gate insulator of 100 nm-Al2O3. A heavily boron-doped layer as the source/drain region was deposited on a (110) polycrystalline diamond substrate to achieve a low ohmic contact resistance. The MOSFETs demonstrate a maximum current density of −400 mA mm $^{-{1}}$ normalized by gate width and a maximum current density of $- 2000\,\,\mu \text{m}$ mA mm−1 normalized by gate length and gate width, which are the highest values for normally-off diamond FETs. The Grain boundaries (GBs) and the nitrogen impurities ($\sim {3}\,\,\times \,\,{10}^{{17}}$ cm $^{-{3}}$) as ionized donors in the channel region caused the threshold voltage (${V}_{\text {th}}$) to shift in the negative direction, exhibiting normally-off characteristics. This technique provides a promising method to achieve high-performance diamond devices, and help improve safety and save energy in switching systems. [ABSTRACT FROM AUTHOR]

Published
2022
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