135 results on '"Syu, Yong-En"'
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2. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
3. N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
4. Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
5. Physical and chemical mechanisms in oxide-based resistance random access memory
6. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
7. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]
8. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
9. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
10. High performance of graphene oxide-doped silicon oxide-based resistance random access memory
11. Temperature-dependent memory characteristics of silicon–oxide–nitride–oxide–silicon thin-film-transistors
12. Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory
13. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory.
14. RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
15. Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes
16. Physical and chemical mechanisms in oxide-based resistance random access memory
17. Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
18. Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
19. Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
20. Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
21. Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
22. Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
23. Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors
24. Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
25. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2structure resistance random access memory
26. Characteristics of hafnium oxide resistance random access memory with different setting compliance current
27. N 2 O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors
28. Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
29. Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device
30. Performance and characteristics of double layer porous silicon oxide resistance random access memory
31. The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
32. Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
33. Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
34. Atomic-level quantized reaction of HfOx memristor
35. N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
36. Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
37. Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices
38. Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
39. Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
40. Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
41. Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
42. Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress
43. Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
44. Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device
45. Silicon introduced effect on resistive switching characteristics of WOX thin films
46. Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure
47. Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor
48. The Effect of Silicon Oxide Based RRAM with Tin Doping
49. Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
50. Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
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