16 results on '"Tsai, Xin-Ying"'
Search Results
2. P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology
3. Performance improvement of Zn0.5Mg0.5O UV sensor by supercritical fluid technology
4. The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
5. Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs
6. Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
7. The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC
8. Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs
9. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment
10. Investigation of Threshold Voltage and Drain Current Degradations in Si$_{\text{3}}$N$_{\text{4}}$/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation
11. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
12. Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors
13. Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology
14. Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation
15. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
16. Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.