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Mingzhi Dai,1 Zhendong Wu,1 Shaocheng Qi,1 Changhe Huo,1 Qiang Zhang,1 Xingye Zhang,1 Thomas J Webster,2 Hengbo Zhang1 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USACorrespondence: Mingzhi Dai Email daimz@nimte.ac.cnBackground: Electronic devices which mimic the functionality of biological synapses are a large step to replicate the human brain for neuromorphic computing and for numerous medical research investigations. One of the representative synaptic behaviors is paired-pulse facilitation (PPF). It has been widely investigated because it is regarded to be related to biological memory. However, plasticity behavior is only part of the human brain memory behavior.Methods: Here, we present a phenomenon which is opposite to PPF, i.e., paired-pulse inhibition (PPI), in nano oxide devices for the first time. The research here suggests that rather than being enhanced, the phenomena of memory loss would also be possessed by such electronic devices. The device physics mechanism behind memory loss behavior was investigated. This mechanism is sustained by historical memory and degradation manufactured by device trauma to regulate characteristically stimulated origins of artificial transmission behaviors.Results: Under the trauma of a memory device, both the signal amplitude and signal time stimulated by a pulse are lower than the first signal stimulated by a previous pulse in the PPF, representing a new scenario in the struggle for memory. In this way, more typical human brain behaviors could be simulated, including the effect of age on latency and error generation, cerebellar infarct, trauma and memory loss pharmacological actions (such as those caused by hyoscines and nitrazepam).Conclusion: Thus, this study developed a new approach for implementing the manner in which the brain works in semiconductor devices for improving medical research.Keywords: artificial bio synapses, ion dynamics, PPI, paired-pulse pulse inhibition, memory loss

Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduMingzhi DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnAbstract: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensors

Changhe Huo,1,2,* Mingzhi Dai,2,3,* Yongbin Hu,4 Xingye Zhang,2,3 Weiliang Wang,2,3 Hengbo Zhang,5 Kemin Jiang,2,3 Pengjun Wang,6 Thomas J Webster,7 Liqiang Guo,4 Wenqing Zhu1 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China; 5School of Electrical Engineering and Information, Sichuan University, Chengdu 610065, People’s Republic of China; 6College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of China; 7Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Pengjun WangCollege of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of ChinaEmail wangpengjun@wzu.edu.cnThomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115 USATel +1 617 3736585Email th.webster@neu.eduBackground: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the threshold voltage increased at higher temperatures, which is different from previously reported results and was repeated on different samples.Methods: Electrical experiments (such as I-V measurements and photoelectron spectrometer experiments) were performed in order to explain such behavior. Double sweeping gate voltage measurements were performed to investigate the mechanism for the temperature dependent behavior.Results: It was found that there was a change of trap charge under thermal stress, which was released after the stress.Conclusion: Non-Arrhenius behaviors (including a linear behavior) were obtained for the amorphous nano oxide thin-film transistors within 303∼425 K, suggesting their potential to be adjusted by measurement processes and be applied as temperature sensors for numerous medical applications.Keywords: thin film transistors, TFTs, temperature, amorphous nano oxide semiconductors, AOS, body temperature sensors, medical applications