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This paper describes an investigation into the electrical behaviour of shallow implantations of boron and phosphorus in silicon. The clover-leaf Van der Pauw patterns were defined by planar masking techniques, and were ion implanted to produce a 'tailored' impurity profile of approximately uniform concentration with depth.
It was found that phosphorus implantations became fully electrically active after annealing at a temperature between 620degreesc and 750degreesc, whereas the boron implantations required an anneal in excess of 900degreesc. A subsidiary activity peak, whose magnitude increased with the ion dose, was observed for the boron implantations after annealing at a temperature around 520degreesc.
The principles of ion implantation have been discussed at length by other authors, for example Gibbons (1968), Kleinfelder (1967) and Nielsen (1967), and recently Large (1969) has described the techniques used at S.E.R.L. During the past two years, papers have been published showing the electrical properties of silicon implanted with various ion species, but very little information has appeared on the electrical behaviour of shallow implantations of boron and phosphorus. The present work was initiated to measure these properties in order that the electrical behaviour of ion-implanted silicon devices be more fully understood. [ABSTRACT FROM AUTHOR]