1. 19.6% electron-irradiated GaInP/GaAs cells
- Author
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J. M. Olson, K.A. Bertness, Daniel J. Friedman, C. Kramer, Sarah Kurtz, and A. E. Kibbler
- Subjects
Range (particle radiation) ,chemistry.chemical_compound ,Materials science ,chemistry ,business.industry ,Doping ,Optoelectronics ,Electron ,Irradiation ,business ,Radiation hardening ,Gallium arsenide - Abstract
Record air mass zero (AMO) efficiencies are reported for two-terminal, two-junction 0.25-cm/sup 2/ Ga/sub 0.5/In/sub 0.5/P/GaAs devices irradiated by 10/sup 15/ cm/sup -2/ 1 MeV electrons. Devices optimized for end-of-life (EOL) had beginning-of-life (BOL) and EOL efficiencies of 23% and 19.6%, respectively. A range of device structures gave EOL efficiencies greater than 18%. The design of the device for optimal radiation hardness is shown to depend on low bottom-cell base doping and optimally thin top cells, as these lead to current-matched EOL devices. Surprisingly, the damage coefficients for Ga/sub 0.5/In/sub 0.5/P are significantly larger than those previously measured and depend on the bottom-cell base doping and top-cell thickness.
- Published
- 1970