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In order to obtain enhancement type n-channel MOS transistors in an enhancement-depletion system it is possible to shift the tresbold voltage of the driver transistors to positive values by implanting Boron ions into the channel region of the devices. In this way the advantages of a low bulk doping level are conserved (low parasitic capacitances, low bulk effect …), while the power dissipation-delay product of the circuits is reduced due to the load which is of the current source type. [ABSTRACT FROM PUBLISHER]

The JIGFET is a novel type of depletion MOS transistor formed by the implantation of a channel between source and drain. Because of its high bulk-transconductance, its linearity and low noise, the JIGFET has been thoroughly studied and modelled for linear applications. The model based on the depletion approximation has been found to be in good agreement with the solution of the Poisson's equation and the experimental results in both the depletion and the inversion regions. [ABSTRACT FROM PUBLISHER]

It can be found from a simultaneous study of MNOS-structures having equal oxide thicknesses, that charge in the structure can penetrate deep in the nitride (even deeper than 200 Å), and that the penetration depth increases with the nitride field strength. Using this method, it can be proved that the decrease of flat-band voltage is due not only to a charge leakage but at the same time to a redistribution of charges in the nitride. The true nitride charge logarithmically decreases in time, while the depth of the center of charge logarithmically increases. [ABSTRACT FROM PUBLISHER]