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Ho,Pr:CaYAlO 4 (Ho,Pr:CYA) crystal doped with 1 at.% Ho3+ and 0.1 at.% Pr3+ was successfully grown using the Czochralski method. Polarized absorption spectra, emission spectra, and fluorescence lifetime measurements were performed. The impact of Pr3+ co-doping on the ∼3 μm emission of Ho3+ ions was analyzed. The energy transfer efficiency from Ho3+:5I 7 to Pr3+:3F 2 energy level was calculated to be 60.66 %, indicating that Pr3+ effectively mitigated the self-termination effect in Ho,Pr:CYA crystals. The absorption cross-section at 645 nm was found to be 1.53 × 10−20 cm2 for σ polarization and 2.62 × 10−20 cm2 for π polarization. The emission cross-section at 2842 nm was calculated to be 0.86 × 10−20 cm2 for σ polarization and 1.33 × 10−20 cm2 for π polarization at 2908 nm, with a full width at half maximum (FWHM) of 139 nm and 88 nm, respectively. The fluorescence lifetimes of the 5I 6 and 5I 7 levels were measured to be 0.17 ms and 2.01 ms, respectively. These results collectively suggest that Ho,Pr:CYA crystals hold great potential as a candidate for 2.8 μm laser applications. • Ho3+,Pr3+ co-doped CaYAlO 4 crystal was grown by the Czochralski method. • The crystal structure, polarized absorption and emission spectra were investigated. • The intensity parameters were obtained using J-O theory. [ABSTRACT FROM AUTHOR]

BGO single crystals doped with Er3+, Tm3+ and Ho3+ rare-earth ions were prepared in the form of rod-type crystal fibers via the micro-pulling down technique to perform an extensive investigation of their visible, near- and mid-infrared luminescence properties and to really decide on their interest as solid-state laser media in the various spectral domains. Revisiting and completing the absorption spectra already available in the literature led to the derivation of more reliable "effective" radiative lifetimes and branching ratios. Registration of the fluorescence decays of the most important emitting levels versus dopant concentrations led for the first time to an unambiguous determination of "intrinsic" emission lifetimes – corresponding to negligible contributions from inter-ionic energy-transfers - and non-radiative multiphonon relaxation rates. Such data also allowed for the determination of the dominant phonon energy which comes into play in the electron-phonon coupling responsible for these multiphonon relaxation processes and for its lattice vibration origin, i.e. a high phonon energy of the order of 820 cm−1 corresponding to the coupling between bending vibrations of (GeO 4)4- tetrahedra and vibrations corresponding to motions of these (GeO 4)4- tetrahedra against the Bi3+ ions for which the rare-earth dopant ions substitute. Using the above data and different methods for the calibration of the registered emission spectra in cross section unit and for the derivation of gain cross section curves finally show that mid-infrared emissions of Er:BGO, Tm:BGO and Ho:BGO around 1.55 μm, 1.9 μm and 2 μm, respectively, occur with comparable gain cross sections as in the most important reference mid-infrared laser materials, although over slightly shifted thus complementary spectral domains. It is shown that potentialities also exist with Tm:BGO in the blue, deep-red and near-infrared spectral domains around 470 nm, 800 nm and 1.45 μm, by pumping the crystals with conventional pump sources and using some suitable co-dopants to avoid detrimental self-terminating processes. • Bi 4 Ge 3 O 12 rod-type crystal fibers doped with Er3+, Tm3+ and Ho3+ ions are successfully grown by using the micro-pulling down technique. • An extensive spectroscopic investigation is performed from the near-UV to the mid-infrared. • Effective radiative and intrinsic emission lifetimes are unambiguously determined for all the important emitting levels. • The origin and the energy of the phonons responsible for the non-radiative multiphonon relaxation of the emitting levels are clearly identified. • Emission and gain cross section spectra show the interest of Er3+, Tm3+ and Ho3+ doped BGO crystals for the high power mid-infrared laser application. [ABSTRACT FROM AUTHOR]