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Transistor random threshold voltage variations due to process fluctuations seriously affects the stability of Static Random Access Memory (SRAM). In this paper, a SRAM bit transistors threshold voltage $({Vth})$ deviation monitoring scheme and system is proposed. This scheme ingeniously achieves on-chip measurement of all transistors threshold voltages without altering compact SRAM bit array layout. Control signal strategies and Transistor ${Vth}$ Determination Circuit (TVDC) for different types of Devices Under Test (DUTs) have been proposed. The system is implemented using a 65 nm CMOS process with a core area of 0.01875mm2. Through Monte Carlo analysis, the Weighted Average (WA) difference of the proposed scheme and the direct measurement method is not more than 10mV, and the Root Mean Square Error (RMSE) difference is not more than 3mV. This system can also effectively detect the cell position of the transistor threshold voltage mismatch simulated by modifying the substrate voltage. For SRAM arrays of different scales, the method proposed in this paper has area efficiency and flexible reconfigurability. [ABSTRACT FROM AUTHOR]

Attaining the performance and efficiency levels required by modern applications often requires the use of application-specific accelerators. However, writing synthesizable Register-Transfer Level code for such accelerators is a complex, expensive, and time-consuming process, which is cumbersome for early architecture development phases. To tackle this issue, a pre-synthesis simulation toolchain is herein proposed that facilitates the early architectural evaluation of complex accelerators aggregated to multi-level memory hierarchies. To demonstrate its usefulness, the proposed gem5-accel is used to model a tensor accelerator based on Gemmini, showing that it can successfully anticipate the results of complex hardware accelerators executing deep Neural Networks. [ABSTRACT FROM AUTHOR]