1. Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics.
- Author
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Liu, Heng, Lai, Qinglin, Fu, Jun, Zhang, Shijie, Fu, Zhaoming, and Zeng, Hualing
- Subjects
FERROELECTRIC crystals ,POLARIZATION (Electricity) ,DATA warehousing ,FERROELECTRICITY ,ELECTRIC fields - Abstract
The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInP
2 S6 via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 μm2 , equal to a density of 31.4 Gbit/in2 . Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics. Flexoelectric effect may offer a voltage-free method to control the polarization in 2D ferroelectrics, but its widespread application remains challenging. Here, the authors report an approach to arbitrarily switch the ferroelectricity in 2D CuInP2 S6 . [ABSTRACT FROM AUTHOR]- Published
- 2024
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