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In semiconductor‐based microlasers, the generated excited carriers can affect both the optical absorption coefficient and refractive index, influencing the lasing behavior and device performance. In this study, the lasing behavior of individual MAPbBr3 microrods pumped by femtosecond laser pulses is investigated using an ultrafast optical Kerr gating technique. By analyzing the spectral and temporal evolution of the lasing behavior, it is found that the band‐filling (BF) effect can cause a significant change in the refractive index of the material, which results in an unfavorable red‐shift and broadening of the resonant modes, deteriorating the laser linewidth and quality factor. The hot carrier cooling process can provide a buffer for alteration of the energy level occupation state, resulting in a small transient refractive index change and slight red‐shift. These results offer insights into the lasing behavior driven by photogenerated carrier dynamics and provide an optimization strategy for semiconductor‐based microlasers. [ABSTRACT FROM AUTHOR]

Germanium diselenide (GeSe2) has recently emerged as a promising material for high‐performance optoelectronic devices due to its high absorption coefficient, wide direct bandgap, and anisotropic electronic properties. For the future applications, it is necessary to understand the dynamic evolution of carriers with ultrafast response. In this work, the transient absorption spectroscopy measurements are performed to study the anisotropic dynamic evolution of GeSe2 under the polarized photoexcitation. It is find that the dynamics exhibit linear dichroism and show a significant Auger recombination process when the photoexcitation is perpendicular to the b‐axis of GeSe2. Using first‐principle and transition dipole moment calculations, it is confirmed that the more carrier localization at Γ point along the Γ‐X (perpendicular to the b‐axis) and increase the Auger recombination. In addition, the Auger recombination coefficient ≈ 1.1×10−31 cm6 s−1 is determined and demonstrated that the defect‐assisted indirect Auger recombination plays a key role in the carrier relaxation process. Through time‐resolved transient absorption spectra, it is further revealed that the ultrafast dynamical evolution of excited state absorption peaks under polarized photoexcitation. These results have implications for improving the quantum efficiency of high‐field polarization‐sensitive optoelectronics. [ABSTRACT FROM AUTHOR]

We demonstrate an environmentally stable femtosecond laser for industrial application based on all polarization‐maintaining Yb‐doped laser and experimentally explore the effect of the net cavity dispersion (NCD) on output characteristics. The oscillator emits pulses with 5.1 ps and a 23 nm spectral bandwidth, then the pulse is compressed to 88 fs. The instabilities over 120 h gives 0.32% relative root mean square noise, indicating high stability of the pulse laser. With effective regulation of NCD, we obtained the maximum spectral bandwidth of 27 nm. Such broadband oscillator with compact all‐fiber configurations provide extremely high stability should be very attractive for long‐term industrial application. [ABSTRACT FROM AUTHOR]

Controlled sequential crystallization of donors and acceptors is a critical factor for achieving enhanced phase separation and efficient charge transfer performance in polymer solar cells (PSCs). In this study, a comprehensive investigation of a structurally simple solvent additive, 1‐fluoro‐2‐iodobenzene (OFIB) is conducted, which efficiently controls the morphology of the active layer, resulting in fibrous assembly and significantly enhancing the power conversion efficiency from 16.34% to 18.38% based on the PM6:L8‐BO system. Density functional theory, molecular dynamics simulations, and grazing incidence small‐ and wide‐angle X‐ray scattering techniques reveal that the addition of OFIB to the processed blend aligns the orientation of the acceptor molecules, thereby enhancing the overall π–π stacking in the active layer. OFIB establishes nearly equal‐strength π–π interactions with the conjugated frameworks of both the donor and acceptor materials, benefiting from the multiple electron conjugation between its iodine atom and the conjugated framework in the active layer. Femtosecond‐timescale photophysical studies demonstrate that the OFIB‐optimized active layer shows reduced exciton losses at the donor–acceptor interface. This study offers a new perspective on the mechanism underlying the function of solvent additives and presents a comprehensive research methodology that will guide the development of next‐generation non‐fullerene acceptors for efficient PSCs. [ABSTRACT FROM AUTHOR]

All‐inorganic lead halide perovskite nanocrystals (NCs) have been widely applied in optoelectronic devices owing to their excellent photoluminescence (PL) properties. However, poor stability upon exposure to water, UV light or heat strongly limits their practical application. Herein, CsPbBr3@Pb‐MOF composites with exceptional stability against water, UV light, and heat are synthesized by ultrasonic processing the precursors of lead‐based MOF (Pb‐MOF), oleylammonium bromide (OAmBr) and cesium oleate (Cs‐OA) solutions at room temperature. Pb‐MOF can not only provide the lead source for the in situ growth of CsPbBr3 NCs, but also the protective layer of perovskites NCs. The formed CsPbBr3@Pb‐MOF composites show a considerable PL quantum yield (PLQY) of 67.8%, and can maintain 90% of the initial PL intensity when immersed in water for 2 months. In addition, the outstanding PL stability against UV light and heat is demonstrated with CsPbBr3 NCs synthesized by the conventional method as a comparison. Finally, a green (light‐emitting diode) LED is fabricated using green‐emitting CsPbBr3@Pb‐MOF composites and exhibits excellent stability without packaging when immersed in water for 30 days. This study provides a practical approach to improve the stability in aqueous phase, which may pave the way for future applications for various optoelectronic devices. [ABSTRACT FROM AUTHOR]