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In order to cope with the grid fluctuation caused by large‐scale wind power connected to the grid, the wind thermal power generation system has been proposed and extensively studied. The wind thermal power generation system uses a wind turbine to drive a heat generation device to heat the heat storage medium, which is further exchanged to drive a turbine to generate electricity. A superconducting magnetic eddy current heater (SMH) is proposed for the characteristics of wind thermal power generation system, which uses non‐resistive, large current‐carrying superconducting coils for excitation, and has high output efficiency and power density. The working principle of magnetic eddy current heating is analysed, and the structure of SMH with no ferromagnetic material and two heating screens inside and outside is proposed according to the characteristics of SMH. An analytical model of the SMH is established, and the influence of the structure and materials of the SMH on the magnetic field distribution is analysed. Based on this, a 22‐pole SMH was designed and analysed for output power at 10–20 rpm. A three‐dimensional magnetism‐stress combined analysis model of SMH is established, and the strain and stress characteristics of SMH are simulated under the condition of maximum output power, which verifies the feasibility of the mechanical properties of existing superconducting materials for application in SMH. [ABSTRACT FROM AUTHOR]

Inverted (p‐i‐n) perovskite solar cells (PSCs) are advantageous in terms of easy fabrication, low‐temperature processibility, negligible hysteresis, and excellent compatibility with the tandem devices in comparison with the regular (n‐i‐p) counterparts. Hole‐blocking layer is crucial for efficient electron transport of inverted PSCs, and only a single hole‐blocking layer of bathocuproine (BCP) is used typically. Herein, bis[2‐(diphenylphosphino)phenyl] ether oxide (DPEPO) with a deep highest occupied molecular orbital (HOMO) energy level is incorporated atop of perovskite film as an auxiliary hole‐blocking layer, resulting in an enhanced electron transport of inverted PSC devices. The P=O group within DPEPO can coordinate with Pb2+ cations of perovskite, leading to passivation of surface defects of perovskite. Besides, incorporation of DPEPO hole‐blocking layer prohibits undesired hole transport from perovskite to PCBM electron transport layer (ETL), thus suppressing non‐radiative electron–hole recombination. As a result, combined with BCP hole‐blocking layer, inverted PSC devices based on double hole‐blocking layers exhibit a decent power conversion efficiency (PCE) of 24.17% with a high open‐circuit voltage (Voc) of 1.15 V which dramatically surpasses that based on single hole‐blocking layer (22.26%). Moreover, incorporation of hydrophobic DPEPO helps to improve the ambient and thermal stabilities of inverted PSC devices. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices. [ABSTRACT FROM AUTHOR]

Developing novel high‐temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next‐generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room‐temperature ferromagnetic semiconductor crystal, FeCr0.5Ga1.5Se4 (FCGS), is reported with a Curie temperature (TC) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g−1, respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non‐magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity‐induced AHE remains robust even up to 400 K. [ABSTRACT FROM AUTHOR]