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Mid‐infrared (MIR) pulsed lasers operating at 2–5 µm have important applications in communication, sensing, and medicine. However, the lack of robust MIR saturable absorbers (SAs) remains a major obstacle. Here, a semiconductor material cadmium oxide (CdO) film with high laser‐induced damage threshold (800 nm, 134 mJ cm−2) and broadband saturable absorption (2.0–3.9 µm) is investigated. The effective tuning of the nonlinear optical response of CdO is demonstrated by adjusting the carrier concentration via a tungsten (W)‐doping scheme. The saturable absorption is improved and carrier relaxation process is accelerated after increasing the W‐dopant level. Based on these findings, the robust CdO‐SAs with customizable parameters are realized and Q‐switched lasers with decreasing pulse width from 372 to 254.3 ns are obtained at 2 µm. The design flexibility provided by CdO opens up a large parameter space that enables the continuous improvement of compact and high‐performance MIR ultrafast lasers. [ABSTRACT FROM AUTHOR]

Indium tin oxide (ITO) has important application in photoelectronic and photonic devices, demanding effective approach and appropriate parameters to modulate the ITO properties. The effects of laser annealing at 1064 nm with different pulse width (875 ps, 10 ns, and 300 ns) on optical and nonlinear optical properties of ITO films were investigated. Compared with 875 ps and 10 ns, laser annealing at 300 ns significantly improved the near-infrared transmittance of ITO films. The change arises from the elimination of oxygen vacancies and reduction of tin oxides, resulting in the decrease of carrier concentration. Finite element simulations indicate that laser annealing with pulse width of 875 ps and 10 ns have high instantaneous peak temperatures of 1128.5 K and 783 K, respectively, while the temperature accumulation between pulses is negligible. On the contrary, the laser annealing with a pulse width of 300 nshas lower peak transient temperature of 343 K but high static residence temperature of 973 K. The results reveal that the modification of ITO films depends more on the static average temperature rather than the instantaneous peak temperature. The modulation of carrier dynamics in both amplitude and temporal domain was demonstrated after 300 ns laser annealing, achieving ultrafast transient response approximately 150 fs. This work provides theoretical and experimental basis for us to select suitable laser conditions for directional annealing of ITO film to make it suitable for the applications of broad optical spectrum photovoltaic devices or ultrafast optical exchange for high-speed data processing. • Laser annealing (LA) is shown for three pulse widths at approximately 0.2 J/cm2. • LA at 300 ns significantly improves the near-infrared transparency due to the reduction of carrier absorption. • Tailorable amplitude and time scale of carrier transient response are achieved by LA, with ultrafast response time 150 fs. • The modification of ITO properties depends on the static temperature rather than transient peak temperature. [ABSTRACT FROM AUTHOR]