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• A series of Mn-doped A 2 PbBr 4 2D perovskites are synthesized and the luminescence properties of Mn2+ ions in related to the A-site cations is explored. • The highest efficiency of the energy transfer from excitons to Mn2+ reaches as high as 78.08 % in (PPA) 2 PbBr 4 :60 % Mn2+ 2D perovskite. • The luminescence mechanism of Mn-doped (PPA) 2 PbBr 4 perovskite with different Mn2+ concentrations are investigated by temperature dependent PL spectra. The incorporation of Mn2+ ions has been widely used to modulate optical properties of two-dimensional (2D) organic-inorganic hybrid perovskites (OIHPs). However, the luminescence mechanism of Mn2+ ions that is related to the A-site cations remains largely unexplored. Herein, we report the synthesis of a series of Mn-doped A 2 PbBr 4 (A = C 6 H 5 (CH 2) n NH 3 , n = 1,2,3,4,) 2D perovskites. The (C 6 H 5 (CH 2) 3 NH 3) 2 PbBr 4 ((PPA) 2 PbBr 4) 2D perovskite exhibited a maximum photoluminescence (PL) quantum yield of 67 %, a prolonged PL lifetime of 0.75 ms, and the highest energy transfer efficiency of 78.07 %. Furthermore, we systematically investigated the luminescence properties of Mn-doped (PPA) 2 PbBr 4 perovskite with different Mn2+ concentrations. The temperature dependent PL spectra indicate a thermalized de-trap process of self-trapped exciton at high temperatures and the presence of permanently shallow defect states in highly doped samples with lower activation energy. We reported the luminescence properties of Mn-doped 2D organic-inorganic hybrid perovskites, with a particular focus on the (PPA) 2 PbBr 4 perovskite material. [Display omitted] [ABSTRACT FROM AUTHOR]

Ce+3 doped CsLaSiS 4 single crystals were synthesized using high-temperature flux synthesis. XRD analysis showed that the products are isostructural to CsLaSiS 4 and crystallize in orthorhombic space group Pnma. Absorption spectra were studied at room temperature, and photoluminescence properties were examined in the temperature range of 5–310 K. The energy of interband transitions E g = 3.75 eV was determined at room temperature in the Tauc model. At room temperature, only a non-elementary d → f emission band of Ce+3 ions was observed in the 520 nm region. The luminescence kinetics upon excitation by a pulsed cathode beam or X-ray synchrotron radiation exhibited a dominant nanosecond component. Decay time, as well as build-up time, decreased with increasing concentration of Ce+3 ions. Concentration quenching of Ce+3 emission was not observed up to 11.9 mol% of Ce+3 ions. At a low temperature of 5 K, new wide emission bands at 422 and 688 nm appeared in the photoluminescence spectrum. It is shown that the 422 nm band in the photoluminescence spectrum corresponds to host emission, specifically the luminescence of self-trapped excitons (STE). The 688 nm emission band corresponds to defect-related luminescence. STE emission is quenched according to the Mott law at temperatures above 26 K with an activation energy of 20 meV. An efficient energy transfer channel from the STE to the Ce+3 ion via the radiative resonance mechanism is observed. The emission of Ce+3 ions and defect-related luminescence can be excited by the intracenter way, due to electron-hole recombination, or by the creation of defect bound excitons. Based on the obtained spectroscopic data, a band scheme illustrating the processes of relaxation of electronic excitations at T = 5 K in Ce+3 doped CsLaSiS 4 crystals is proposed. [Display omitted] • Ce+3 doped CsLaSiS 4 single crystals were obtained through high-temperature flux synthesis. • Inter configurational d-f transitions in Ce3+ ions were studied upon both UV- and X-ray excitation. • Luminescence kinetic studies were conducted using a pulsed cathode beam and X-ray synchrotron radiation. • Self-trapped excitons, defect-bound excitons, and impurity luminescence were observed at T = 5 K. [ABSTRACT FROM AUTHOR]