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Heterogeneous photocatalysis is an important research problem relevant to a variety of sustainable energy technologies. However, obtaining high photocatalytic efficiency from visible light absorbing semiconductors is challenging due to a combination of weak absorption, transport losses, and low activity. Aspects of this problem have been addressed by multilayer approaches, which provide a general scheme for engineering surface reactivity and stability independent of electronic considerations. However, an analogous broad framework for optimizing light–matter interactions has not yet been demonstrated. Here, we establish a photonic approach using semiconductor metasurfaces that is highly effective in enhancing the photocatalytic activity of GaAs, a high-performance semiconductor with a near-infrared bandgap. Our engineered pillar arrays with heights of ∼150 nm exhibit Mie resonances near 700 nm that result in near-unity absorption and exhibit a field profile that maximizes charge carrier generation near the solid–liquid interface, enabling short transport distances. Our hybrid metasurface photoanodes facilitate oxygen evolution and exhibit enhanced incident photon-to-current efficiencies that are ∼22× larger than a corresponding thin film for resonant excitation and 3× larger for white light illumination. Key to these improvements is the preferential generation of photogenerated carriers near the semiconductor interface that results from the field enhancement profile of magnetic dipolar-type modes. [ABSTRACT FROM AUTHOR]

Leaky waves are complex eigenmodes compatible with radiation in terms of their momentum, which can be supported by open waveguiding structures and can be effective at modeling radiative phenomena from such systems. Here, a "flatland" analog of leaky‐wave radiation is introduced to describe a novel mechanism for in‐plane radiation leakage that can occur in artificial or natural low‐dimensional materials. Possible platforms are illustrated for its physical realization, in the form of suitably designed planar junctions of isotropic impedance surfaces that implement surface‐wave or line‐wave guiding structures. A simple and insightful semi‐analytical model for the radiation mechanism is developed and validated against full‐wave numerical simulations. These results provide a new tool for the advanced manipulation of surface waves at the nanoscale, which relies entirely on interface‐optics effects, and can find interesting applications in the emerging field of polaritonics. [ABSTRACT FROM AUTHOR]

Here we present a roadmap on Photonic metasurfaces. This document consists of a number of perspective articles on different applications, challenge areas or technologies underlying photonic metasurfaces. Each perspective will introduce the topic, present a state of the art as well as give an insight into the future direction of the subfield. [ABSTRACT FROM AUTHOR]

Topological boundary modes in electronic and classical-wave systems exhibit fascinating properties. In photonics, topological nature of boundary modes can make them robust and endows them with an additional internal structure--pseudo-spins. Here, we introduce heterogeneous boundary modes, which are based on mixing two of the most widely used topological photonics platforms--the pseudo-spin-Hall-like and valley-Hall photonic topological insulators. We predict and confirm experimentally that transformation between the two, realized by altering the lattice geometry, enables a continuum of boundary states carrying both pseudo-spin and valley degrees of freedom (DoFs). When applied adiabatically, this leads to conversion between pseudo-spin and valley polarization. We show that such evolution gives rise to a geometrical phase associated with the synthetic gauge fields, which is confirmed via an Aharonov-Bohm type experiment on a silicon chip. Our results unveil a versatile approach to manipulating properties of topological photonic states and envision topological photonics as a powerful platform for devices based on synthetic DoFs. [ABSTRACT FROM AUTHOR]

Optical metalenses offer a compact approach for the development of nanoscale optical devices with various imaging functionalities. Realizing high‐quality images using metalenses with large numerical aperture (NA) requires eliminating unwanted optical aberrations. Existing strategies have largely focused only on correcting chromatic aberrations, and a metalens capable of simultaneously correcting chromatic and spherical aberrations has not yet been developed. Here, this issue is addresed by realizing an aplanatic phase profile for a red–green–blue (RGB) achromatic metalens, thereby demonstrating an RGB‐achromatic aplanatic metalens. This device consists of crystalline silicon nanostructures and it enables RGB‐achromatic aplanatic focusing with an NA of 0.635. The focal length of metalens remains unchanged at the three RGB wavelengths, whereas the associated focal spots are significantly smaller than those of an RGB‐achromatic metalens with spherical aberrations. An enhanced RGB imaging resolution is demonstrated, offering exciting opportunities to power up various imaging and display applications using flat metalenses. [ABSTRACT FROM AUTHOR]