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Chalcogenide composites, a category of non-oxide glasses, have shown great potential in various applications such as optoelectronics, thermal imaging, memory-switching devices, lasers, and more. Owing to the distinctive physical properties inherent in chalcogenide glasses, these materials have garnered significant interest across various technological domains. This study aims to analyze the impact of incorporating sulfur (S) and antimony (Sb) into (S3Sb2)x(S2Ge)100−x:x = 10, 20, 30 chalcogenide composites, assessing their radiation shielding, structural, physical, and electrical properties. Three distinct composites, designated as SSbGe-10, SSbGe-20, and SSbGe-30, are irradiated with gamma photons across an energy range of 0 to 15 MeV. The assessment of the radiation shielding attributes is conducted through the utilization of the FLUKA Monte Carlo (MC) Code. Phillips and Thorpe's theory is employed to analytically estimate structural and physical attributes such as Coordination Number (CN), bond-bending constraints (NS), bond-stretching constraints (NC), constraints Number (Ncons), Floppy mode (F), and stoichiometry (R). The electrical features of the provided specimens are analyzed through the utilization of the effective electron conductivity (Ceff), as ascertained by the Phy-X: PSD software. The findings indicate that the augmentation of the x value within the range of 10–30 wt.% positively augments the gamma photon shielding efficacy of the composite materials. Both NS and NC demonstrate diminishing patterns, encompassing the range of 2.64 to 2.575 and 7.56 to 7.30, respectively. Additionally, the stoichiometry (R > 1) for the investigated samples indicates that the chosen glasses are rich chalcogenide composites. The exhaustive examination of the physical, radiation shielding, and electrical characteristics of the prepared chalcogenide glasses provides valuable insights for subsequent investigations into various chalcogenide glass formulations. [ABSTRACT FROM AUTHOR]

In this research, we analyzed the impact that the optical characteristics of dielectric surface passivation and antireflection coating schemes have on the performance of passivated emitter and rear cell (PERC) silicon solar cells. We employed wafer ray tracer (WRT) and automate for simulation of heterostructure (AFORS‐HET) simulations, as well as experimental characterization of fabricated thin film coatings. We investigated three distinct front surface morphologies: planar surface, upright pyramids, and inverted pyramids. Using WRT, we calculated the photogeneration current densities (JG) for PERC devices with three schemes: (i) SiNx/AlOx as antireflection coating and passivation stacks on both the front and rear sides, (ii) SiNx antireflection coating on the front side and AlOx passivation layer on the rear side, and (iii) SiNx/AlOx as antireflection coating and passivation stacks on the front side with an AlOx passivation layer on the rear side. Following simulation with optimal JG, two schemes are experimentally evaluated: PECVD SiNx (70 nm) and atomic layer deposition (ALD) AlOx (15 and 25 nm). We confirmed the growth effects and optical properties using X‐ray diffraction, Raman spectroscopy, effective lifetime, and refractive index measurements. The most favorable electrical properties were obtained with SiNx (70 nm, front) and AlOx (25 nm, front and rear), where the AlOx can be deposited via ALD bifacially on a single step, minimizing processing while maintaining passivation performance. Finally, we used AFORS‐HET to simulate the maximum performance of PERC bearing such films. The results showed a Voc = 0.688 V, Jsc = 41.42 mA/cm2, FF = 84%, and packing conversion efficiency (PCE) = 24.12% as the optimal solar cell performance values. [ABSTRACT FROM AUTHOR]

Cerium-doped Ca2Al2SiO7 phosphors were synthesized via the combustion technique and annealed at 1073 K, 1173 K, and 1373 K. X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), photoluminescence (PL), and thermoluminescence (TL) studies were performed to explore the variation of structural, morphological, luminescence, and TL properties with annealing temperature. The XRD plot showed an increase in crystallinity with an increase in annealing temperature. Similarly, the enhancement of PL intensity with an increase in annealing temperature supports the increased crystallinity of the phosphor samples. Detailed analysis of traps and trap parameters was carried out using the principle of TL. Samples were irradiated with different γ-ray doses, and, on heating, luminescence was observed. Thus, TL glow curves were drawn and deconvoluted using computerized glow curve deconvolution (CGCD) and Chen's peak shape method to study the traps and trap parameters. With increasing annealing temperature, an increase in TL intensity was observed. Regardless of annealing temperature, every sample displayed a linear dose–response for doses ranging from 3 Gy to 500 Gy. TL investigations suggested that the produced phosphors are suitable candidates for gamma dosimetry applications. [ABSTRACT FROM AUTHOR]