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In this work, a novel high current capability gallium nitride (GaN) tri-gate power device with an integrated parasitic bipolar junction transistor (BJT) is proposed to enhance its static electrical characteristics. The device's electrical characteristics are thoroughly studied and analyzed using 3D technology computer-aided design simulation tools. The two-dimensional electron gas channel is effectively pinched off in the off-state due to the depletion region induced by side-gate metals and parasitic BJT, resulting in a positive threshold voltage (V TH) and enhanced mode (E-mode) operation. The parasitic BJT provides an additional conductive channel in the on-state, significantly improving the output current capability. Compared with the conventional tri-gate (C-Trigate) device, the proposed high current capability GaN trigate (HC-Trigate) device boosts saturation output current by nearly a factor of three under identical conditions, reaching 1,761 mA mm−1. The 3D simulation shows the proposed GaN HC-Trigate power device features a positive V TH of 1.1 V, a low specific on-resistance (R on,sp) of 0.18 mΩ*cm2 at breakdown voltage of 760 V, and the Baliga's figure of merit of 3.21 GW cm−2. Furthermore, the GaN HC-Trigate power device exhibits superior thermal performance and switching characteristics, indicating its great potential for power electronics applications. [ABSTRACT FROM AUTHOR]

The multi-terminal direct current (DC) grid has extinctive superiorities over the traditional alternating current system in integrating large-scale renewable energy. Both the DC circuit breaker (DCCB) and the current flow controller (CFC) are demanded to ensure the multiterminal DC grid to operates reliably and flexibly. However, since the CFC and the DCCB are all based on fully controlled semiconductor switches (e.g., insulated gate bipolar transistor, integrated gate commutated thyristor, etc.), their separation configuration in the multiterminal DC grid will lead to unaffordable implementation costs and conduction power losses. To solve these problems, integrated equipment with both current flow control and fault isolation abilities is proposed, which shares the expensive and duplicated components of CFCs and DCCBs among adjacent lines. In addition, the complicated coordination control of CFCs and DCCBs can be avoided by adopting the integrated equipment in the multiterminal DC grid. In order to examine the current flow control and fault isolation abilities of the integrated equipment, the simulation model of a specific meshed four-terminal DC grid is constructed in the PSCAD/EMTDC software. Finally, the comparison between the integrated equipment and the separate solution is presented a specific result or conclusion needs to be added to the abstract. [ABSTRACT FROM AUTHOR]