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Dynamic critical fluctuations in magnetic materials encode important information about magnetic ordering in the associated critical exponents. Using nitrogen-vacancy centers in diamond, we implement $T_2$ (spin-decoherence) noise magnetometry to study critical dynamics in a 2D Van der Waals magnet CrSBr. By analyzing NV decoherence on time scales approaching the characteristic correlation time $\tau_c$ of critical fluctuations, we extract the critical exponent $\nu$ for the correlation length. Our result deviates from the Ising prediction and highlights the role of long-range dipolar interactions in 2D CrSBr. Furthermore, analyzing the divergence of the correlation length suggests the possibility of 2D-XY criticality in CrSBr in a temperature window near $T_C$ where static magnetic domains are absent. Our work provides a first demonstration of $T_2$ noise magnetometry to quantitatively analyze critical scaling behavior in 2D materials., Comment: 19 pages main text, 4 main text figures, 26 pages Supplementary Materials, 13 Supplementary figures

The excited orbitals of color centers typically show stronger electric dipoles, which can serve as a resource for entanglement, emission tuning, or electric field sensing. Here, we use resonant laser excitation to expose strong transition dipoles in the excited state (ES) orbitals of the negatively charged nitrogen vacancy center in diamond. By applying microwave electric fields, we perform strong Rabi driving between ES orbitals, and show that the dressed states can be tuned in frequency and are protected against fluctuations of the transverse electric field. In contrast with previous results, we observe sharp microwave resonances between magnetic states of the ES orbitals, and find that they are broadened due to simultaneous electric dipole driving.

Color centers in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct fluorescence and spin properties in each of these states have been exploited to show storage of classical information in three dimensions, but the memory capacity of these platforms has been thus far limited by optical diffraction. Here, we leverage local heterogeneity in the optical transitions of color centers in diamond to demonstrate selective charge state control of individual point defects sharing the same diffraction-limited volume. Further, we apply this approach to dense color center ensembles, and show rewritable, multiplexed data storage with large areal density. These results portend alternative approaches to information processing in the form of devices with enhanced optical storage capacity.