Search

The magneto-electronic properties of ferromagnetic MnSb grown by molecular beam epitaxy can be dominated by the presence of a surface state in the minority spin bandgap when the surface is Sb-terminated. The material resistivity is 120 µΩ.cm at 295 K, and although this is determined by the majority spin population, the anisotropic magnetoresistance, dependent on minority spins, is ∼0.24% for the Sb-terminated devices with Mn-terminated devices showing ∼0.02%. At 295 K, the extraordinary Hall constant is 0.5 Ω/T for the Sb-terminated surface and 1.5 Ω/T for the Mn-terminated surface with the extraordinary Hall constant and anisotropic magnetoresistance behaving with an anomalous temperature dependence between 295 and 1.5 K. The dominant MnSb structural phase on the GaAs (001) orientation is naturally doped p-type with a carrier density ∼1 × 1022 cm−3 determined by the normal Hall effect after the extraordinary Hall effect has saturated at higher fields than ∼2 T. Spintronic device possibilities are discussed, particularly the spin-light emitting diode and magnetic nano-structures. A natural p-type doping in MnSb limits the devices to dominant hole carrier effects although there is compatibility with both III–V and Si–Ge materials for hybrid device possibilities. [ABSTRACT FROM AUTHOR]