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Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability. However, because ZnO has higher electron mobility than organic hole transport materials, the carrier transport is unbalanced. In addition, ZnO NPs has many surface defects, which is easy to capture electrons or holes, increasing the probability of non-radiative recombination. To solve these problems, we carefully selected an organic compound diallylamine (DAA) doping method to modify the surface of ZnO. DAA is found to not only reduce the quenching at the interface between ZnO and QD, but also regulate the energy level position to promote the carrier injection balance of QLED devices. Compared with control ZnO QLED, the external quantum efficiency (EQE) of the red QLED with DAA-modified ZnO NPs is significantly improved, the peakEQE of the devices increased by 21% from 18.8% to 23.6%. respectively. It is a simple and economical solution for manufacturing high-performance QLED.

Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge transport layer materials inevitably lead to charge injection imbalances and low device performance. Herein, we developed a simple technique by using femtosecond laser scanning over the QLED devices. The results indicate that scanning with a femtosecond laser improves the conductivity of the hole transport layer and increases the external quantum efficiency of the QLED devices. Our work provides an effective route for realizing high performance QLED devices with efficient post-treatment.

The industrialization of Fe-based amorphous alloys with high a saturation magnetic flux density (Bs) has been limited so far due to their inadequate amorphous forming ability (AFA). In this study, the effects of substituting Si with C on the AFA, thermal stability, and magnetic properties of Fe82Si6−xB9P3Cx (x = 0–6) alloys were systematically investigated. The experimental results demonstrate that the AFA, thermal stability, and soft magnetic properties can be significantly enhanced by the addition of C. Specifically, at a copper wheel velocity of 40 m/s, the Fe82Si6−xB9P3Cx (x = 2, 3, 4, 5 and 6) alloy ribbons exhibit a fully amorphous structure in the as-spun state. The activation energy required for the α-Fe phase crystallization process in Fe82Si6−xB9P3Cx (x = 0, 2, 4, and 6) alloys is determined to be 326.74, 390.69, 441.06, and 183.87 kJ/mol, respectively. Among all of the compositions studied, the Fe82Si4B9P3C2 alloy exhibits optimized soft magnetic properties, including a low coercivity (Hc) of 1.7 A/m, a high effective permeability (μe) of 10608 (f = 1 kHz), and a relatively high Bs of 1.61 T. These improvements may be attributed to a more homogeneous and optimized magnetic domain structure being achieved through proper C addition. This work holds significant implications for the advancement of Fe-based soft magnetic amorphous alloys with high Bs.