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The macroscopic fundamental diagram (MFD) is a nonuniversal changing process over network traffic status which indicates different shapes in different networks. Hysteresis is observed in the MFD of some urban networks. It is a unique phenomenon when the network remains at low stability level and usually appears around the congestion period. This paper analyzed network peak stability through focusing on hysteresis. The formation mechanism of hysteresis is deduced from the mathematical method based on previous research studies. The precondition of hysteresis and the changing process of network state can be figured by mathematical deduction. It indicates that hysteresis only occurs conditionally in the period of macroscopic congestion and is not a universal phenomenon. Heterogeneity is an important factor leading to network instability. The hysteresis patterns of different peaks in MFD are different due to the variation of network flow. Real data are collected from Atlanta's urban network to verify the analysis of hysteresis. To discuss the changing process of hysteresis in different peaks, a three-stage division is proposed and time series is presented as a third dimension in MFD. It is worth noticing that the existence and form of hysteresis in morning and evening peaks are different. Although there is a higher peak flow in the morning peak, the stability of the evening peak performs better when hysteresis occurs in the network. The different fluctuations in the morning and evening peaks are exhibited through the 3D version of MFD. The otherness of hysteresis in different peaks is explained through a 3D coordinate system with cross-compared corresponding indexes., Author(s): Shunyu Yao [1]; Weike Lu [2]; Lan Liu (corresponding author) [1]; Guojing Hu [3] 1. Introduction Due to the increasing number of vehicles in urban city, the requirement for [...]

With the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field‐induced butterfly‐like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal Co3In2S2 is reported. The kagome‐lattice Co3In2S2 single crystals are synthesized via a polycrystal‐source chemical vapor transport approach, possessing a high carrier mobility reaching 104 cm2V−1s−1. The Co3In2S2 single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field‐induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low‐temperature magnetoresistance behavior of the Co3In2S2 reveals a butterfly‐like AMR effect with a maximum value of 850%, exhibiting a superposition of the two‐, four‐, and six‐fold AMR terms. Band structure calculations suggest that such a field‐induced butterfly‐like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices. [ABSTRACT FROM AUTHOR]

With a nontrivial topological band and intrinsic magnetic order, two-dimensional (2D) MnBi 2 Te 4 -family materials exhibit great promise for exploring exotic quantum phenomena and potential applications. However, the synthesis of 2D MnBi 2 Te 4 -family materials via chemical vapor deposition (CVD), which is essential for advancing device applications, still remains a significant challenge since it is difficult to control the reactions among multi-precursors and form pure phases. Here, we report a controllable synthesis of high-quality magnetic topological insulator MnBi 2 Te 4 and MnBi 4 Te 7 multilayers via an evaporation-rate-controlled CVD approach. The multilayers are grown on a mica substrate epitaxially, exhibiting a regular triangle shape. By controlling growth temperatures, the thickness and lateral size of the 2D MnBi 2 Te 4 are well regulated. Furthermore, the magneto-transport measurements clearly reveal multistep spin-flop transitions for both odd- and even-number-layered MnBi 2 Te 4 multilayers. Our study marks a significant stride toward future transformative applications in devices based on high-quality, edge- and thickness-controlled 2D magnetic topological quantum materials.

Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe 3 GaTe 2 provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and engineered by using magnetic force microscopy (MFM). The skyrmion lattice is realized by a specific field-cooling process and can be further erased and painted via delicate manipulation of the tip stray field. The skyrmion lattice with opposite topological charges ( S = ±1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe 3 GaTe 2 not only serves as a potential building block for skyrmion-based spintronic devices, but also presents prospects for Fe 3 GaTe 2 -based heterostructures with the engineered topological spin textures.

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (T c ) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe 3 GaTe 2 (c-Fe 3 GaTe 2 ), which boasts a high T c = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe 3 GaTe 2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe 3 GaTe 2 ., (© 2024 Wiley‐VCH GmbH.)