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Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world 1-6 . However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon 7-12 , monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond., Competing Interests: Competing interests: The authors declare no competing interests., (© 2025. The Author(s), under exclusive licence to Springer Nature Limited.)