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Abstract Intimate Partner Violence (IPV) during pregnancy poses a serious threat to maternal health, particularly in low- and lower-middle-income countries (LMICs). Despite these known risks, the role of spousal educational differences in IPV during pregnancy remains poorly understood. This study aimed to examine this influence, analyzing data from multiple countries across five continents. This study utilized data from Demographic and Health Surveys (DHS) focusing on lower and LMIC countries. DHS employs two-stage sampling to gather comprehensive health data. Thirty countries from five regions were selected. Covariates like husband’s age, residence, wealth, education, husband’s working status, husband’s education, and spousal educational gap were considered. Cross-sectional survey design was considered. Chi-square test was done to find the association between IPV and covariates. Binary logistic regression was used to assess whether the independent variable is related to spousal educational disparity and other covariates of IPV during pregnancy. Out of 152,643 (weighted) pregnant women from all five continents, 8357 (weighted) experienced IPV during pregnancy. IPV is most prevalent in Papua New Guinea (17.01%; 95% CI 15.76–18.38%)), while least prevalent in Cambodia (0.99%; 95% CI 0.88–1.10%)). Overall, the IPV prevalence was (5.47%; 95% CI 5.30–5.65%)). Educational disparity and socioeconomic factors play a significant role in encountering IPV during pregnancy. This study revealed complex, region-specific effects on violence likelihood, emphasizing implications for policymakers and practitioners addressing IPV. Education disparity emerged as a significant factor; lower-educated couples exhibit increased abusive behavior.

Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. In this work, an investigation of microscopic and spectroscopic characteristics of (100), (2¯01), (010)–(AlxGa1–x)2O3 films is conducted. A combination of scanning transmission electron microscopy, atom probe tomography (APT), and first‐principle calculations (DFT) is performed. The findings reveal consistent in‐plane chemical homogeneity in lower aluminum content (x = 0.2) films. However, higher aluminum content (x = 0.5), showed inhomogeneity in (100), (010)–(AlxGa1–x)2O3 films attributed to their spectroscopic properties. The study expanded APT's capabilities to determine Ga─O and Al─O bond lengths by mapping their ion‐pair separations in detector space. The change in ion‐pair separations is consistent with varying orientations, irrespective of aluminum content. DFT also demonstrated a similar trend, concluding that Ga─O and Al─O bonding energy has an inverse relationship with their bond length as crystallographic orientations vary. This systematic study of growth orientation dependence of (AlxGa1–x)2O3 films’ microscopic and spectroscopic properties will guide the development of new (100) and (2¯01)‐(AlxGa1–x)2O3 along with existing (010)–(AlxGa1–x)2O3 films.

Intimate Partner Violence (IPV) during pregnancy poses a serious threat to maternal health, particularly in low- and lower-middle-income countries (LMICs). Despite these known risks, the role of spousal educational differences in IPV during pregnancy remains poorly understood. This study aimed to examine this influence, analyzing data from multiple countries across five continents. This study utilized data from Demographic and Health Surveys (DHS) focusing on lower and LMIC countries. DHS employs two-stage sampling to gather comprehensive health data. Thirty countries from five regions were selected. Covariates like husband’s age, residence, wealth, education, husband’s working status, husband’s education, and spousal educational gap were considered. Cross-sectional survey design was considered. Chi-square test was done to find the association between IPV and covariates. Binary logistic regression was used to assess whether the independent variable is related to spousal educational disparity and other covariates of IPV during pregnancy. Out of 152,643 (weighted) pregnant women from all five continents, 8357 (weighted) experienced IPV during pregnancy. IPV is most prevalent in Papua New Guinea (17.01%; 95% CI 15.76–18.38%)), while least prevalent in Cambodia (0.99%; 95% CI 0.88–1.10%)). Overall, the IPV prevalence was (5.47%; 95% CI 5.30–5.65%)). Educational disparity and socioeconomic factors play a significant role in encountering IPV during pregnancy. This study revealed complex, region-specific effects on violence likelihood, emphasizing implications for policymakers and practitioners addressing IPV. Education disparity emerged as a significant factor; lower-educated couples exhibit increased abusive behavior. [ABSTRACT FROM AUTHOR]

In this work, we systematically investigated the growth of Si-doped β-Ga2O3 films using low-pressure chemical vapor deposition (LPCVD) system, achieving high room-temperature Hall mobilities of 162 and 149 cm2/V·s at carrier concentrations of 1.51 × 1017 and 1.15 × 1017 cm−3, respectively, for homoepitaxial (010) β-Ga2O3 film grown on β-Ga2O3 substrates and heteroepitaxial ( 2 ¯ 01) β-Ga2O3 film grown on off-axis c-sapphire substrate with 6° miscut-representing the highest mobilities reported for LPCVD-grown β-Ga2O3 materials. Carrier concentrations were precisely tuned by varying SiCl4 flow rates at a growth temperature of 1000 °C, resulting in concentrations ranging from 1.15 × 1017 to 1.19 × 1019 cm−3 as confirmed by both Hall and capacitance–voltage (C–V) measurements. The films exhibited high crystalline quality, confirmed by high resolution x-ray diffraction and Raman spectroscopy, indicating phase purity and structural integrity. Surface morphologies characterized by field-emission scanning electron microscope and atomic force microscopy showed a strong correlation between carrier concentrations and surface smoothness, with lower concentration resulting in reduced RMS roughness. Secondary Ion Mass Spectrometry analysis revealed uniform Si incorporation, with low carbon, hydrogen, and chlorine impurities below detection limits, indicating high purity of the films. A high low-temperature peak mobility exceeding >843 cm2/V·s was achieved at a carrier concentration of 1.74 × 1016 cm−3 for a ( 2 ¯ 01) β-Ga2O3 heteroepitaxial film at 80 K, highlighting the high purity and low compensation of these films. These findings emphasize the potential of LPCVD growth system for producing high-purity β-Ga2O3 films with thickness ranging between ∼2.3 and 11.7 μm and faster growth rates (∼4.7–17 μm/h), promising transport properties, controllable doping, and scalability for developing high-power vertical devices. [ABSTRACT FROM AUTHOR]