Search

Your search keyword '"Merckling, Clement"' showing total 5 results
Start Over Author "Merckling, Clement" Publication Year Range This year
5 results on '"Merckling, Clement"'

3. Crystallinity and composition of Sc1−x(−y)Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Author

Pollefliet, Bert, primary, Porret, Clement, additional, Everaert, Jean-Luc, additional, Sankaran, Kiroubanand, additional, Piao, Xiaoyu, additional, Rosseel, Erik, additional, Conard, Thierry, additional, Impagnatiello, Andrea, additional, Shimura, Yosuke, additional, Horiguchi, Naoto, additional, Loo, Roger, additional, Vantomme, André, additional, and Merckling, Clement, additional

Published
2024
Full Text
View/download PDF

4. Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO 3 Thin Films Grown on (001)-Oriented Si Substrates.

Author

Baryshnikova, Marina, Boelen, Andries, Ceccon, Luca, Herreman, Vincent, McMitchell, Sean R. C., Haffner, Christian, and Merckling, Clement

Subjects
OPTICAL properties, STOICHIOMETRY, CRYSTAL structure, HIGH temperatures, THIN films, PEROVSKITE
Abstract

In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO3 layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after annealing at high temperatures (>600 °C). We show that as-grown 15 nm thick non-stochiometric SrTiO3 layers present surprisingly lower FWHM values of the (002) omega diffraction peak compared to fully stoichiometric layers of similar thickness. This can misleadingly point to superior crystalline quality of such non-stochiometric layers. However, thermal post-deposition anneals of these layers at temperatures up to 850 °C in oxygen show strong detrimental effects on the crystalline structure, surface and interface with the Si (001) substrate. On the contrary, the post-deposition anneals applied to the stoichiometric samples strongly improve the physical, optical and electrical properties of the epitaxial SrTiO3 thin films. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

5. Crystallinity and composition of Sc1−x(−y)Six(Py) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Author

Pollefliet, Bert, Porret, Clement, Everaert, Jean-Luc, Sankaran, Kiroubanand, Piao, Xiaoyu, Rosseel, Erik, Conard, Thierry, Impagnatiello, Andrea, Shimura, Yosuke, Horiguchi, Naoto, Loo, Roger, Vantomme, André, and Merckling, Clement

Abstract

Sc-based contacts to Si:P have shown great potential for NMOS devices. However, the promising properties of this material system are not yet fully understood. This work provides new insights into the crystallinity and composition of annealed TiN/Sc/Si:P stacks. After silicidation, two distinct phases are evidenced, with orthorhombic ScSi lying atop a thin Sc1−x−ySixPyinterfacial layer that shares a commensurate interface with the underlaid Si:P, hypothetically resulting in a low interface defectivity. The formed ScSi phase is observed to be thermally stable between ∼450 °C and 700 °C, which is suitable for most device applications. The impact of additional thermal budgets within this temperature range is investigated, revealing potential origins for thermally induced degradation of the contact properties.

Published
2024
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results