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Lanthanide ions doped in perovskite (LIDP) nanocrystals (NCs) provide an effective way to utilize the emission of lanthanide metals in a solution‐processable way, combining the theoretical photoluminance quantum yield (PLQY) of ≈200%. To utilize advantages, LIDP‐NCs have inspired studies exploring the fundamental physics of energy transfer, including the up‐conversion or down‐conversion process, and the optoelectronic applications of solar cells and white light‐emitting didoes. This review broadens the scope of LIDP nanocrystal matrix semiconductors in electroluminescence devices in the near‐infrared (NIR) range (>900 nm). A research is summarized on the synergistic effect of lanthanide ions and perovskite matrix in the near‐infrared region, and discuss from the perspective of fabrication of lanthanide‐based electroluminescent devices using perovskite materials as the matrix. The multiple optical transitions, bandgap tunability, and quantum‐cutting effect to provide a tutorial on understanding LIDP‐NCs are started. The details of synthesizing LIDP materials and aim to lay the foundation for preparing NIR electroluminescent devices with high efficiency and application value are then illustrated. The scientific issues that limit the performance of LIDP NCs‐based electroluminescent devices and discuss the potential strategies for the future development of LIDP material are focused on. [ABSTRACT FROM AUTHOR]

Perovskite light‐emitting diodes (LEDs) emitting in the pure‐red range of 630–640 nm show promise in meeting the requirement of the Rec.2100 standard for high‐resolution displays. However, the high‐performing LEDs (external quantum efficiency, EQE >20%) in the pure‐red range suffer from half‐life time (luminance drop to 50% of the initial luminance) of <1.6 h, resulting from the injection/transportation barrier and surface‐defects–induced charge carrier quenching. Herein, a bi‐ligand synergy strategy is developed to address the T50 issue: the introduction of iodide‐rich ligands with different chain length increases the vacancy formation energy of halogen ions and enhances the exciton binding energy, resulting in a high photoluminescence quantum yield of over 92%. The treated CsPbBrx/I3−x films exhibit 34‐fold improved material stability related to the control at continuous aging at 100 °C. As a result, pure‐red LEDs with CIE coordinates of (0.698, 0.301) approaching the Rec.2100 standard are reported. These pure‐red LEDs exhibit a low turn‐on voltage of 1.8 V, which is the lowest among reported pure‐red perovskite LEDs, and even 0.15 V lower than the optical bandgap energy (1.95 eV); and a maximum EQE of ≈21% with fourfold enhanced T50 relative to the best previous pure‐red perovskite LEDs. [ABSTRACT FROM AUTHOR]