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Accurately detecting human trafficking is particularly challenging due to its covert nature, difficulty in distinguishing trafficking from non-trafficking exploitative conditions, and varying operational definitions. Typically, detecting human trafficking requires resource-intensive efforts from resource-constrained anti-trafficking stakeholders. Such measures may need personnel training or machine learning-based identification technologies that suffer from detection errors. Repeated usage of such measures risks biasing detection efforts and reducing detection effectiveness. Such problems raise the question: "How should imperfect detection resources be allocated to most effectively identify human trafficking?" As an answer, we construct a class of resource allocation models that considers various optimal allocation scenarios. These scenarios range from optimal location selection for monitoring to optimal allocation of a finite set of imperfect resources, given error rates. We illustrate the applicability of these models across both human and technology-facilitated detection contexts at the India–Nepal border and in the global seafood industry. Insights from our models help inform operational strategies for allocating limited anti-human trafficking resources in a way that effectively preserves human rights and dignity. [ABSTRACT FROM AUTHOR]

The total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated and examined for the various ultra-thin body (UTB) layers and combination of gate oxide stacks. Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. While being irradiated, conventional FinFET with UTB layer reduces the accumulation of trap charges to a certain level. Further, reduction of these charges can be achieved by using a high-k dielectric with UTB layer. This reduction in interface trap charges enhance the OFF-state performance while maintaines the positive threshold voltage of the device. The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. • Total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated. • Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. • Under radiation FinFET with UTB layer reduces the accumulation of trap charges. • Reduction in interface trap charges enhances the OFF state performance. • The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. [ABSTRACT FROM AUTHOR]