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Flash lamp annealing (FLA) is an ultra-short annealing method which excellently meets the requirements of thin film processing and has already been used in microelectronics. Due to the relatively high hole mobility, thin Ge layers are highly interesting as a transistor channel material or generally as a functional layer both in CMOS technology and in the field of low-cost electronics. One possibility to realize ohmic contacts with low contact resistance is the use of metal germanides, especially the stoichiometric NiGe phase. In this work, NiGe contacts on thin Ge films were fabricated by magnetron sputtering followed by FLA. The evolution of microstructure with increasing thermal budget was traced by transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. The electrical measurements focus on the determination of contact resistance by the circular transfer length method (cTLM). The contacts were fabricated by two different approaches, and the influence of different process steps on layer morphology and the uncertainty of the measurement was studied.

Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature., Ministerio de Economía y Competitividad (España), Structural Characterization Facilities at Ion Beam Center, Federal Ministry of Education & Research, Alexander von Humboldt Foundation, Helmholtz Association, China Scholarship Council, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

The talk gives a short overview about the combination of flash lamp annealing and roll-to-roll applications including the application fields of inkjet printing with nanoparticle inks, transparent conduction oxides, and energy materials.

Currently, we observe a continuous need for innovative flexible optoelectronics that are present in smart homes, smart healthcare products and different sensors like gas or temperature sensors. All those applications require a fast and cheap fabrication process. In the last two decades, flash lamp annealing (FLA or photonic curing) has extended its scope of applications from traditional microelectronics to many other areas where thin film coatings are in use. The layer deposition by inkjet printing followed by FLA, preferably on flexible substrates, features a couple of advantages such as material savings, no need for lithographic structuring processes, a fast adaption to changing design requirements and easy possibility for up-scaling. In the case of nanoparticle-based inks, FLA has not only the task to evaporate remnants of the solvent, the binder and other additives, and to sinter the nanoparticles, but has advantageous in terms of energy and process time saving [1]. Currently, we are putting a roll-to-roll (R2R) tool combining inkjet printing and FLA into operation, and first successful tests to print nanoparticle inks containing transparent conductive oxides for optoelectronic applications (TCOs) like zinc oxide (ZnO), aluminum doped zinc oxide (AZO) and also metal inks like copper oxide/copper (CuO/Cu) followed by ex-situ FLA have been done. In this poster, we will report some of these first results and discuss the corresponding application cases. In addition, the extension of the palette of available materials will address further application, as we will discuss in the case of Si, which e.g. is of high interest as anode material for LIBs and electronic devices in the area of low-cost or printed electronics.

Bei diesem Datensatz handelt es sich um die im Paper beschriebenen µRaman, RBS und TEM Daten sowie die SRIM Simulationen

Ongoing miniaturization down to a few nanometers will lead to further significant reductions in the power consumption of microchips and sensors. The number of innovative applications immediately arise from the potential of integrating a microbattery as a power source for flexible electronics, wearables, the Internet of Things, medical implants and sensor chips. In this work, a thin film lithium-Ion battery (TF-LIB) is demonstrated. The TF-LIB consists of a high potential copper silicide anode (CuSi-anode) that can be integrated on a Siwafer with standard semiconductor technology and a hybrid polymer electrolyte with a high lithium-ion transference number. Two cathode materials were tested: LiFePO4 and NCA. The CuSi-anode is fabricated by Si sputtering followed by flash lamp annealing (FLA). This anode material replaces metallic lithium for reaching high energy densities and provides the thermal stability required in microelectronics (> 230 °C for soldering). The hybrid polymer electrolyte is mechanically stable against the volume change of the silicon during the lithiation/ delithiathion processes. The electrolyte is unreactive and thermally stable at high temperatures during operation.