Search

Novel efficient visible and near-infrared emitting phosphors NaY(MoO4)2(NYM):Ln3+ (Ln = Ce and Yb) were proposed in this work. The crystal structure, lattice vibration characteristics, morphology, and luminescent properties of NaY(MoO4)2 phosphors were described. Sensitization of Ln3+ from the host with various doping concentrations was investigated. The yellow-green emission was achieved in Ce3+ single-doped NYM phosphors at UV ultraviolet excitation sensitized by the MoO42− group. Under UV excitation, characteristic emissions of Ce3+ at 400–700 nm and Yb3+ at 1000 nm of NYM:Ce,Yb were observed, enabling the spectral down-conversion applications. With the increasing concentration of Yb3+, the emission intensity as well as the lifetime of Ce3+ decreased, confirming the energy transfer from Ce3+ ions to Yb3+ ions. And the energy transfer coefficient was 27% for NYM:0.01Ce,0.10Yb phosphor. These results indicate that the as-prepared phosphors have potential applications in optical and photonic devices. [ABSTRACT FROM AUTHOR]

Infrared soldering as a step in module encapsulation, which would cause light-induced degradation (LID) and light- and elevated-temperature-induced degradation (LeTID) effects on solar cells, may cause efficiency mixing among solar cells that were originally in the same grade within the module after soldering. Furthermore, the problem of bright and dark regions would appear, which would result in a decrease in the CTM value. Current injection is considered to be one of the effective methods to solve the above problem. However, after the current injection treatment, there is still a 10% probability of the appearance of bright and dark regions in modules. In this work, we first adopted the conventional current injection process in monocrystalline passivated emitter and rear cells (PERCs). The effects of injected currents, temperature and time were systematically optimized, and cells with or without the current injection under the optimal parameters were illuminated with 1 sun at 85 °C for 25 h. Secondly, a piece of equipment was developed to further stabilize the performance of solar cells and improve the CTM value. The results showed that the best current injection parameters were a temperature of 185 °C, an injected current of 11 A and an injection time of 770 s. Compared with the cells without any pretreatment, the relative changes in the η, Voc, Isc and FF of the cells pretreated with the optimal conditions mentioned above were 0.23%, 0.08%, 0.02% and 0.08% larger, respectively, after 25 h of degradation. Then, solar cells processed by current injection were processed with our equipment, and the probability of a problem occurring was reduced from 10% to 2%. Meanwhile, the CTM value increased by 0.4%. Finally, a balance mechanism between H0 and H0-X has been proposed to explain the mechanism of the equipment. [ABSTRACT FROM AUTHOR]

Laser doping (LD) of born‐doped Si paste (Si paste) is a potential boron‐doping approach for advanced solar cells. It is aimed to develop a top‐hat LD instead of a Gaussian LD and a rear‐side polishing process to fabricate P++ local contacts for improved passivated emitter and rear contact (i‐PERC) cells. With the help of vision alignment, LD is conducted on a dashed line pattern of printed Si paste, which decreases the consumption of paste. The variations of boron content in Si paste and the laser pulse energy density can help customize the doping profile. The predicted result of the boron LD profile is a peak dopant density of 2 × 1019 atoms cm−3 and a dopant depth of over 4.0 μm. When higher firing temperature, it can obtain thicker localized back surface field of over 7 μm, since the gradient of the residual Si concentration at the Al/Si interface can suppress the formation of voids. The overall increment in fill factor, short‐circuit current, and open‐circuit voltage enhances the average efficiency by 0.11% for i‐PERC cells and 0.09% for i‐bifacial PERC cells, respectively, due to the improved local contacts. [ABSTRACT FROM AUTHOR]

An important challenge in industrial laser ablation is laser-induced damage. In this study, reduced damage was achieved through the transition of the laser distribution from a Gaussian beam to a top-hat beam using diffractive optical elements (DOE), which overcome inhomogeneous irradiation. The higher peak fluence of a Gaussian beam far exceeded the ablation threshold and led to severely melted silicon at a higher depth covering the polished texture. The top-hat beam, with uniform irradiation, had a superior ablation characteristic and created a uniform square opening with the shallow melted silicon in the lift-off process. Thus, its effective minor carrier lifetime was 15.35% less at an ablated area fraction of 2% after re-passivation because of the decreased damage. After optimizing the ablation pattern with a top-hat beam, the local contacts improved the average open-circuit voltage (Voc) and short-circuit current (Isc) values of the cells due to the decreased damage and the uniform openings, but the damage induced by a Gaussian beam was too deep and can be partly restored under back surface field (BSF) formation. The overall increment in Isc and Voc enhanced the average efficiency by 0.05% of the absolute value for the PERC cells and 0.03% of the absolute value for bi-facial PERC cells. [ABSTRACT FROM AUTHOR]