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A novel phosphate glass of the P 2 O 5 -SnCl 2 -Fe 2 O 3 system was synthesized using the melt-cooling technique. The effect of substituting SnO for SnCl 2 on the properties of the glass was systematically explored. The material was analyzed using X-ray diffraction (XRD), differential scanning calorimetry (DSC), Fourier-transform infrared spectroscopy (FTIR), and a thermal expansion test. The thermal expansion coefficient (TEC) analysis revealed that the glass transition temperature initially rises and subsequently falls with increasing SnO content. The incorporation of Sn and Fe ions not only reduces the characteristic temperature of the glass but also enhances its chemical stability, presenting significant potential for applications in low-temperature sealing technologies. [ABSTRACT FROM AUTHOR]

Abstract Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/V-s at 5 × 1012 cm-2 Qh for SnO device without UV annealing. This is the highest µeff among oxide semiconductor pFETs at high Qh, which is required to realize low-power high-density monolithic 3D CMOS logic. This requires excellent surface roughness, good uniformity and free-from grain boundaries that is beyond the thermally-annealed poly-Si. Excellent on-current/off-current (ION/IOFF) value of 1.05 × 105 were measured simultaneously in the UV-annealed SnO pFET, which is due to the ultra-thin 8 nm thick SnO nanosheet channel to pinch off the channel leakage. From X-ray photoelectron spectroscopy (XPS) analysis, the 48% µeff improvement by UV irradiation is due to increased Sn2+ and decreased Sn0. Such high µeff at high Qh, large ION/IOFF, smooth surface, good uniformity and low thermal budget process are the enabling technologies for monolithic 3D CMOS.

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An exquisite, engineering of two poor hole transporting materials (HTMs, SnO, and PDTON) to form an excellent double‐layered HTL (SnO/PDTON) for inverted tin‐perovskite solar modules (TPSMs) is developed. SnO/PDTON has better photovoltaic performance than the commonly used PEDOT:PSS HTM when large‐area TPSMs are fabricated. Thermally evaporated SnO (that is a simple, available oxide with high hole mobility, good transparency, and adjustable frontier orbitals energy levels) film is used as a main hole transporting layer (HTL). Amphiphilic polymer PDTON (having the amine and ether groups on the side chains) film is used as a Co‐HTL, cross‐linker, passivator, and interface modification agent, as unveiled various physicochemical studies. Double‐layered SnO/PDTON with a flat morphology and good affinity toward perovskite precursor solution creates also a proper surface for depositing large‐area, high‐quality TPsk film. Therefore, TPSM (25.2 cm2 active area on 10 cm × 10 cm ITO substrate) based on double‐layered SnO/PDTON HTL achieving an efficiency over 10% with a negligible current hysteresis is reported for the first time. This study emphasizes not only the exquisite design of combining the specific characteristics of two prosaic HTMs to become a good double‐layered HTL but also gives a direction toward fabricating TPSMs to be applied in all‐perovskite tandem solar module. [ABSTRACT FROM AUTHOR]

This study unveils a superior method for energy storage synthesis, employing CdO, SnO, and CdO0·2/SnO0.2 hetero-junction electrodes through enhanced solid-state reaction. The CdO and SnO electrodes with a specific capacitance of 266.66, 191.66, 166.66 ​F/g and 138.88, 122.22, and 115.07 ​F/g. The CdO0·2/SnO0.2 hetero-junction nanoparticles with a specific capacitance of 370.37, 222.22, 158.73 ​F/g. The charge storage capacity of CdO0·2/SnO0.2 hetero-junction nanoparticle electrodes is outstanding, making them highly beneficial for energy storage and supercapacitor applications. The XRD patterns obtained from the synthesized CdO0·2/SnO0.2 hetero-junction nanoparticles exhibit distinct diffraction peaks, showing a cubic crystal structure. These diffraction peaks, at 2θ values of 27.111°, 34.189°, 38.682°, 52.635°, 55.793o, 62.779o, 66.676o, and 79.496° can be attributed to the (111), (200), (211), (212), (220), (300), (22), and (311) diffraction planes of CdO0·2/SnO0.2 hetero-junction nanoparticles. The observation of a grain-like shape in the CdO0·2/SnO0.2 hetero-junction nanoparticles structure is attributed to CdO, which serves as a confirmation of the formation of a hetero-junction. The energy bandgap of CdO, SnO, and CdO0·2/SnO0.2 hetero-junction nanoparticles material are 2.50, 3.50, and 3.35 ​eV respectively.

We report growth and characterization of n-Si/p-SnOx heterojunction using RF sputtering for deposition of p-type SnOx under controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnOx were varied by controlling the growth oxygen pressure of SnOx. Several characterization techniques, including PL (photoluminescence), AFM (atomic force microscopy), FESEM (field emission scanning electron microscopy), XRD, I-V characteristics and Hall measurement, were conducted to analyze the structural, optical, and electrical properties of the n-Si/p-SnOx heterojunction. The knee voltage (Vknee), or cut-in voltage, was calculated by analyzing the gradient of the dark current-voltage (J-V) curves when the bias was applied in the forward direction. The Vknee values for type-I, type-II, and type-III n-Si/p-SnOx heterojunctions were determined to be 0.62 V, 0.84 V, and 1.0 V, respectively. The ideality factors (n1 and n2) were determined to be 1.52, 2.22, 3.52, and 8.41, 9.31, 10.34, respectively, for various heterojunction types. The reverse saturation current densities, J01 and J02 ranging from approximately 10−7 to 10−6 A/cm2, and 10−5 to 10−4 A/cm2, respectively. The objective of this experimental work is to investigate especially, the prospect of silicon /metal-oxide (Si/SnOx) based heterojunction to be used as optical sensors with tunable optoelectronic properties of SnOx.

[Display omitted] • Effects of H doping on the phase structure and optoelectronic properties of SnO. • H doping facilitates the formation of metallic Sn phase in SnO films by sputtering. • H doping suppresses formation of secondary oxide phases (e.g.,SnO 2 , Sn 3 O 4) in SnO. • Effects of post thermal annealing on SnO films are also investigated. • Formation of Sn vacancies related defects gives rise to p-type conductivity in SnO. Hydrogen (H) is a ubiquitous impurity, which can significantly affect the phase structure and the optoelectronic properties of oxide semiconductors. To date, a well-established understanding of the effects of H doping on the properties of p-type transparent SnO is still lacking. Here, we present a comparative study to reveal the role of H in SnO films by magnetron sputtering. We find that in as-grown undoped SnO films, in addition to the tetragonal SnO phase, secondary phases of SnO 2 or Sn 3 O 4 are present under certain growth temperatures. In contrast, a small fraction of metallic Sn phase is included in the as-grown H-doped SnO (SnO:H) films, attributed to the partial reduction of SnO by the H 2 in the sputtering gas. Effects of post thermal annealing (PTA) on the properties of SnO films are also explored. Results strongly indicate that H doping or PTA facilitates the formation of Sn phase and Sn vacancies related defects, giving rise to the p-type conductivity observed in the undoped or H-doped SnO films. The present study provides a comprehensive understanding of the evolution of phase structures as well as defect properties of SnO films, which is crucial for their future studies and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Pedot: PSS(poly(3,4-ethylenedioxylthiophene):poly(styrenesulfonate))-based composites often exhibit remarkable characteristics regarding high electrical conductivity and great processability, being a suitable candidate for thermoelectric (TE) applications. To increase its performance, PEDOT:PSS is commonly blended with scarce and toxic inorganic compounds based on Se, Te or Bi. In this work we propose the use of one p-type metal oxide semiconductor (MOs): tin(II) oxide (SnO), motivated by its abundance and low toxicity. Hybrid PEDOT:PSS/SnO composites were obtained by firstly blending Ethylene glycol (EG) with PEDOT:PSS and then by adding p-type SnO, previously synthesized by a chemical route. The mixture was deposited via spin-coating onto glass substrates. The Power Factor (PF) of the composites increased by a factor of 300 with the combined EG/SnO composition., (© 2024 Wiley-VCH GmbH.)

The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf 0.5 Zr 0.5 O 2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories., (© 2024 The Authors. Small published by Wiley‐VCH GmbH.)

Electrocatalytic conversion of CO 2 to syngas is an attractive pathway for transforming CO 2 into high-value chemicals, but the process still suffers from low selectivity. In our work, we construct a two-dimensional (2D) structure of Cu 2 Se-SnO heterojunction catalyst through a high-temperature thermal reduction method. The catalyst with two phases located in the same plane exhibits efficient charge transfer, and the tunable heterojunction interface acts as active sites for CO 2 adsorption and activation. Additionally, its suitable *CO adsorption energy facilitates the desorption of intermediates, leading to the formation of CO. Finally, this catalyst demonstrates excellent selectivity for syngas, maintaining a Faradaic efficiency (FE) of over 60% across a wide range of potentials (-0.67 ∼ −1.07 V vs. RHE) with adjustable syngas ratios and up to 92% FE at −0.97 V vs. RHE. This research provides a new approach for balancing reduction CO 2 and competing hydrogen evolution reaction. [Display omitted] • Cu 2 Se-SnO nanosheet heterojunction with two phases locates in the same plane. • The tunable heterojunction interface acts as active sites for CO 2 reduction. • The in-plane heterojunction can avoid the shielding of the interface. • The introduction of SnO can decrease the adsorption strength of *CO on Cu 2 Se. • This catalyst demonstrates excellent selectivity for syngas with a FE over 60%. [ABSTRACT FROM AUTHOR]

Metal oxide semiconductor (MOS)-based complementary thin-film transistor (TFT) circuits have broad application prospects in large-scale flexible electronics. To simplify circuit design and increase integration density, basic complementary circuits require both p- and n-channel transistors based on an individual semiconductor. However, until now, no MOSs that can simultaneously show p- and n-type conduction behavior have been reported. Herein, we demonstrate for the first time that Cu-doped SnO (Cu:SnO) with HfO 2 capping can be employed for high-performance p- and n-channel TFTs. The interstitial Cu + can induce an n-doping effect while restraining electron-electron scatterings by removing conduction band minimum degeneracy. As a result, the Cu 3 atom % :SnO TFTs exhibit a record high electron mobility of 43.8 cm 2 V -1 s -1 . Meanwhile, the p-channel devices show an ultrahigh hole mobility of 2.4 cm 2 V -1 s -1 . Flexible complementary logics are then established, including an inverter, NAND gates, and NOR gates. Impressively, the inverter exhibits an ultrahigh gain of 302.4 and excellent operational stability and bending reliability.