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In this study, the effects of stress relaxation on the thermoelectric properties (carrier concentration n, Hall mobility μH, weighted mobility μW, density-of-state mass md*, Seebeck coefficient S, and thermopower factor PF) of undoped ZnO films were rationalized in terms of native defects (VO-related defects and Zni-related donors) induced through the deposition temperature (TD) during the sputtering process. All investigated ZnO films exhibited compressive stress and tended to become less compressive with increasing TD. The stress relaxation at high TD resulted in improved film crystallization and decreased native defect concentration, thus significantly enhancing md* through the reduction of intrinsic lattice defects, while less carriers were trapped and scattered by defects. Therefore, n and μ increased simultaneously (by 28 times and one order of magnitude, respectively), markedly enhancing the PF of dopant-free ZnO films. [ABSTRACT FROM AUTHOR]

The performance of thermoelectric materials is typically assessed using the dimensionless figure of merit, zT. Increasing zT is challenging due to the intricate relationships between electrical and thermal transport properties. This study focuses on Y2Te3‐based thermoelectric materials, which are predicted to be promising for high‐temperature applications due to their inherently low lattice thermal conductivity. A series of Y2+xTe3 compositions with excess Y is synthesized to explore the effects on electronic and structural characteristics. Density functional theory calculations suggest that additional Y atoms increase charge carriers, thereby enhancing electrical conductivity and boosting thermoelectric performance. X‐ray diffraction analysis reveals that the presence of excess Y reduces lattice volume and alters bonding structures. Furthermore, the addition of Bi significantly enhances the power factor by promoting the segregation of elemental Bi particles and the formation of Y‐Bi‐rich grain boundaries, which improve weighted mobility. This microstructural optimization leads to a fourfold increase in the Seebeck coefficient, resulting in a peak zT of 1.23 at 973 K and a predicted maximum conversion efficiency of 10.3% under a temperature difference of 673 K. These findings highlight the potential of Y2Te3 for high‐temperature thermoelectric applications and demonstrate the effectiveness of grain boundary engineering in enhancing thermoelectric performance. [ABSTRACT FROM AUTHOR]

Lattice softening is an intricate mechanism utilized to modulate lattice thermal conductivity (κlat). However, experimental observations are often complicated by numerous factors including thermal regimes, elemental matrices, and crystalline topographies, making the fundamental mechanisms complex. In this study, the temperature gradients are meticulously harnessed during phase transitions, both in heating and cooling trajectories, to ascertain that atomic configuration acts as the paramount factor modulating phonon propagation. Within CuTeI, the predilection between the tetragonal (β) and orthorhombic (α) phases is deftly manipulated via specific thermal pathways to a juncture of 273 K. A salient 44% variance in κlat is observed consequent to a singular alteration in the structural disposition of the bridging Cu atoms. Such atomic configurations delineate pronounced differential effects on the transmission dynamics of transverse and longitudinal phonons. The theoretical analysis indicates that the transverse acoustic velocity plays a more pivotal role in dictating κlat than its longitudinal counterpart due to its greater contribution to the Grüneisen parameter. The synergistic interplay of lattice softening and anharmonicity enhancement culminates in an exceptionally diminished κlat in α‐CuTeI, registering a record low κlat of 0.21 W/(m × K) among inorganic materials dominated by phonon–phonon scattering at 273 K. The revelations proffer avant‐garde perspectives for the nuanced modulation of phonon velocities and κlat. [ABSTRACT FROM AUTHOR]