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Highlights The review provides a comprehensive summary of performance limits of the single two-dimensional transition metal dichalcogenide (2D-TMD) transistor. The review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. The review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.

Abstract With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.

Highlights This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits, heterogeneous integration, sensing circuits, artificial intelligence chips, and quantum chips in sequence. A comprehensive analysis of the current trends and challenges encountered in the development of 2D materials is summarized. An in-depth roadmap outlining the future development of 2D electronics is presented, and the most accessible and promising avenues for 2D electronics are suggested.

Abstract The development of strain sensors with high stretchability and stability is an inevitable requirement for achieving full‐range and long‐term use of wearable electronic devices. Herein, a resistive micromesh reinforced strain sensor (MRSS) with high stretchability and stability is prepared, consisting of a laser‐scribed graphene (LSG) layer and two styrene‐block‐poly(ethylene‐ran‐butylene)‐block‐poly‐styrene micromesh layers embedded in Ecoflex. The micromesh reinforced structure endows the MRSS with combined characteristics of a high stretchability (120%), excellent stability (with a repetition error of 0.8% after 11 000 cycles), and outstanding sensitivity (gauge factor up to 2692 beyond 100%). Impressively, the MRSS can still be used continauously within the working range without damage, even if stretched to 300%. Furthermore, compared with different structure sensors, the mechanism of the MRSS with high stretchability and stability is elucidated. What's more, a multilayer finite element model, based on the layered structure of the LSG and the morphology of the cracks, is proposed to investigate the strain sensing behavior and failure mechanism of the MRSS. Finally, due to the outstanding performance, the MRSS not only performes well in monitoring full‐range human motions, but also achieves intelligent recognitions of various respiratory activities and gestures assisted by neural network algorithms (the accuracy up to 94.29% and 100%, respectively). This work provides a new approach for designing high‐performance resistive strain sensors and shows great potential in full‐range and long‐term intelligent health management and human–machine interactions applications.

Depression is currently a major contributor to unnatural deaths and the healthcare burden globally, and a patient’s battle with depression is often a long one. Because the causes, symptoms, and effects of medications are complex and highly individualized, early identification and personalized treatment of depression are key to improving treatment outcomes. The development of wearable electronics, machine learning, and other technologies in recent years has provided more possibilities for the realization of this goal. Conducting regular monitoring through biosensing technology allows for a more comprehensive and objective analysis than previous self-evaluations. This includes identifying depressive episodes, distinguishing somatization symptoms, analyzing etiology, and evaluating the effectiveness of treatment programs. This review summarizes recent research on biosensing technologies for depression. Special attention is given to technologies that can be portable or wearable, with the potential to enable patient use outside of the hospital, for long periods.

Research on the flexible hybrid epidermal electronic system (FHEES) has attracted considerable attention due to its potential applications in human–machine interaction and healthcare. Through material and structural innovations, FHEES combines the advantages of traditional stiff electronic devices and flexible electronic technology, enabling it to be worn conformally on the skin while retaining complex system functionality. FHEESs use multimodal sensing to enhance the identification accuracy of the wearer’s motion modes, intentions, or health status, thus realizing more comprehensive physiological signal acquisition. However, the heterogeneous integration of soft and stiff components makes balancing comfort and performance in designing and implementing multimodal FHEESs challenging. Herein, multimodal FHEESs are first introduced in 2 types based on their different system structure: all-in-one and assembled, reflecting totally different heterogeneous integration strategies. Characteristics and the key design issues (such as interconnect design, interface strategy, substrate selection, etc.) of the 2 multimodal FHEESs are emphasized. Besides, the applications and advantages of the 2 multimodal FHEESs in recent research have been presented, with a focus on the control and medical fields. Finally, the prospects and challenges of the multimodal FHEES are discussed.

A negative capacitance (NC) effect has been proposed as a critical pathway to overcome the ‘Boltzmann tyranny’ of electrons, achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor devices. In particular, the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic devices. However, to date, only a transient NC effect has been confirmed in hafnium-based ferroic materials, which is usually accompanied by hysteresis and is detrimental to low-power transistor operations. The stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based films. This difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution deposition. Here, we prepare epitaxial ferroelectric Hf _0.5 Zr _0.5 O _2 and antiferroelectric ZrO _2 films with single-phase structure and observe the capacitance enhancement effect of Hf _0.5 Zr _0.5 O _2 /Al _2 O _3 and ZrO _2 /Al _2 O _3 capacitors compared to that of the isolated Al _2 O _3 capacitor, verifying the stabilized NC effect. The capacitance of Hf _0.5 Zr _0.5 O _2 and ZrO _2 is evaluated as −17.41 and −27.64 pF, respectively. The observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.

Computing in memory (CIM) breaks the conventional von Neumann bottleneck through in situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both high precision and energy efficiency, provides a sustainable paradigm for increasingly sophisticated artificial intelligence (AI) applications but remains challenging. Here, we propose a complementary metal-oxide semiconductor-compatible ferroelectric hybrid CIM platform that consists of Boolean logic and triggers for digital processing and multistage cell arrays for analog computation. The basic ferroelectric-gated units are assembled with solution-processable two-dimensional (2D) molybdenum disulfide atomic-thin channels at a wafer-scale yield of 96.36%, delivering high on/off ratios (>107), high endurance (>1012), long retention time (>10 years), and ultralow cycle-to-cycle/device-to-device variations (~0.3%/~0.5%). Last, we customize a highly compact 2D hybrid CIM system for dynamic tracking, achieving a high accuracy of 99.8% and a 263-fold improvement in power efficiency compared to graphics processing units. These results demonstrate the potential of 2D fully ferroelectric-gated hybrid hardware for developing versatile CIM blocks for AI tasks. [ABSTRACT FROM AUTHOR]