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Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the emitted photon output, enhancing their performance as chemical sensors and single-photon sources. Micro-optical structures are typically used for this task, with the drawback of a large size compared to the embedded single emitters. Nanophotonic architectures hold the promise to modify dramatically the emission properties of QDs, boosting light–matter interactions at the nanoscale, in ultracompact devices. Here, we investigate the interplay between gallium arsenide (GaAs) single QDs and aluminum gallium arsenide (AlGaAs) nanostructures, capitalizing on the Kerker condition for precise control of the QD emission directivity. An extensive analysis of the photoluminescence spectra of several QDs embedded in nanodisks revealed a pronounced directivity enhancement due to the Kerker effect, confirmed by theoretical simulations, resulting in a 14-fold increase of emitted intensity. Angle-resolved spectroscopy experiments also proved that the integration of GaAs QDs within nanostructures determines a precise angled emission, offering a distinctive avenue for manipulating the spatial characteristics of emitted light by exploiting Mie resonances. This work contributes to the optimization of QD integration in nanostructures and suggests potential improvements for applications in optical communications.