Search

In this study, a CIGS solar cell with a Mo/Cu(In0.7Ga0.3)Se2(CIGS)/CdS/ZnO/Al-doped ZnO (AZO) structure was simulated by Atlas silvaco-TCAD software. The photovoltaic characteristics of solar cells using CdS and ZnSe buffer layers were calculated and compared. Then, the photovoltaic characteristics were examined with different thicknesses of the ZnSe buffer layer. The 25 nm thickness was selected as the optimum thickness. After optimization of the ZnSe layer thickness, the photovoltaic characteristics of solar cells were evaluated by changing the conduction band offset (CBO). The highest CIGS solar cell conversion efficiency was obtained in the range from -0.5 eV to +0.5 eV for CBO. Finally, graphene was replaced with Al-doped ZnO (AZO) due to its high optical transparency, high carrier mobility, and proper mechanical properties. Graphene was used as a monolayer and multilayer as a transparent conductive oxide (TCO) layer. Simulations predicted the highest efficiency for solar cell structure based on Mo/CIGS/ZnSe/i-ZnO/monolayer graphene and the photovoltaic parameters were Jsc=38.64 mA/cm², Voc=0.67 V, FF=79.33% and η=20.71%. [ABSTRACT FROM AUTHOR]