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Your search keyword '"Wang, Zhenze"' showing total 7 results
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7 results on '"Wang, Zhenze"'

6. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress.

Author

Yan, Anzhi, Wang, Chunlin, Yan, Jianlan, Wang, Zhenze, Zhang, Enyi, Dong, Yu, Yan, Zhao‐Yi, Lu, Tian, Cui, Tianrui, Li, Ding, Shen, Penghui, Jin, Yuxin, Liu, Houfang, Yang, Yi, and Ren, Tian‐Ling

Subjects
TRANSISTOR circuits, INTEGRATED circuits, HYDROGENATED amorphous silicon, AMORPHOUS semiconductors, POLYCRYSTALLINE silicon, THIN film transistors, COMPLEMENTARY metal oxide semiconductors
Abstract

High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Author

Zhao, Ruiting, Liu, Houfang, Yang, Mingdong, Lu, Tian, Li, Zhirui, Shi, Zeqi, Wang, Zhenze, Liu, Junwei, Yang, Yi, and Ren, Tian-Ling

Abstract

Logic-in-memory (LIM) architecture holds great potential to break the von Neumann bottleneck. Despite the extensive research on novel devices, challenges persist in developing suitable engineering building blocks for such designs. Herein, we propose a reconfigurable strategy for efficient implementation of Boolean logics based on a hafnium oxide-based ferroelectric field effect transistor (HfO2-based FeFET). The logic results are stored within the device itself (in situ) during the computation process, featuring the key characteristics of LIM. The fast switching speed and low power consumption of a HfO2-based FeFET enable the execution of Boolean logics with an ultralow energy of lower than 8 attojoule (aJ). This represents a significant milestone in achieving aJ-level computing energy consumption. Furthermore, the system demonstrates exceptional reliability with computing endurance exceeding 108cycles and retention properties exceeding 1000 s. These results highlight the remarkable potential of a FeFET for the realization of high performance beyond the von Neumann LIM computing architectures.

Published
2024
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