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Metal chalcogenide nanocrystals with variable composition and shape can conveniently be produced using cation exchange synthesis; however, the presence of cation‐containing ligands inherited from the starting material often results in contamination of the final product. To address this issue, a two‐step ligand replacement strategy is developed to fabricate CuInSe2/CuInS2 nanorods from CdSe/CdS nanorods via removal of Cd‐phosphonates from an intermediate Cu2‐xSe/Cu2‐xS phase used in the cation exchange conversion. This synthetic approach furnishes CuInSe2/CuInS2 nanorods with cadmium content below 1 at.%, and high photoluminescence quantum yields reaching 40% in the near‐infrared spectral range. Transient absorption studies reveal that the band alignment in the CuInSe2/CuInS2 heterostructure features a quasi‐type II character, with an electron localized in the core and a hole wavefunction spread over the entire nanorod. The efficient passivation of the core and the reduced Cd content leads to excitonic emission with full width at half maximum down to 110 meV, superimposed with a broad emission band from copper‐induced defects. Field‐effect transistors based on cadmium‐free CuInSe2/CuInS2 nanorods show two orders of magnitude lower noise current density compared with the cadmium‐rich devices. The responsivity and specific detectivity of these devices reach 230 mA W−1 and 108 Jones, respectively, under near‐infrared excitation at room temperature. [ABSTRACT FROM AUTHOR]

Despite recent advances, it is still difficult to fabricate deep blue‐emitting perovskite light‐emitting diodes (LEDs) that are immune to the color instability caused by halide mixing. This is largely because it is still challenging to achieve bright, stable, pure bromide perovskite materials with deep blue emission. Here, a novel strategy is reported for synthesizing ultrasmall CsPbBr3 quantum dots (QDs) under ambient conditions. Precise size control is used to tune the peak emission wavelengths, via the confinement effect, from 433 to 501 nm. These ultrasmall QDs, with sizes of 2–6 nm, exhibit ultralow trap density and stable photoluminescence quantum yields up to 94%, particularly in the deep blue spectral region (440–465 nm). QD‐LEDs fabricated with these materials achieve an external quantum efficiency of 1.0% at 459 nm. The exceptional control of the emission properties demonstrated here suggests a new strategy for building stable, efficient blue QD‐LEDs. [ABSTRACT FROM AUTHOR]

Organic solar cell (OSC) development continues to demonstrate impressive device efficiency improvements. However, the materials synthetic simplicity essential to industrialization remains seriously lacking attention, imparting inferior performance records in low‐cost devices. Hence, low bandgap and completely non‐fused electron acceptors (CNFEAs) having simple molecular structures are investigated herein. In contrast to typically explored fused‐ring acceptors with smaller backbone conformational variations, minimizing the interface recombination sites through a greater extent of localized domains is identified as more critical in CNFEAs, leading to remarkable fill factors (FFs) approaching 75%, among the highest currently realized for low‐cost systems. However, this comes with diminishing charge generation efficiency. The general ternary blend optimization strategy modifying the morphology of host components is limited in preserving such remarkably high FFs. To suppress the trade‐off while keeping notable FFs, a new perspective of constructing functionally bridged components based on optical, electronic, and thermodynamic properties is introduced here. Specifically, charge generation is unrestrained from the host acceptor localized domains through the introduction of a "bridge" component while also taking advantage of the configuration to channel polarons toward the efficient transport moieties of the host components. Accordingly, this work incubates understanding‐guided optimizations toward the advancement of more practical devices. [ABSTRACT FROM AUTHOR]

The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO 2 ) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO 2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO 2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (V OC ) exceeding 1.19 V. The V OC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO 2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T 90 = 1000 h), higher than T 80 = 1000 h for the control SnO 2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering., (© 2024 Wiley‐VCH GmbH.)

Producing heterostructures of cesium lead halide perovskites and metal-chalcogenides in the form of colloidal nanocrystals can improve their optical features and stability, and also govern the recombination of charge carriers. Herein, the synthesis of red-emitting CsPbI 3 /ZnSe nanoheterostructures is reported via an in situ hot injection method, which provides the crystallization conditions for both components, subsequently leading to heteroepitaxial growth. Steady-state absorption and photoluminescence studies alongside X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy analysis evidence on a type-I band alignment for CsPbI 3 /ZnSe nanoheterostructures, which exhibit photoluminescence quantum yield of 96% due to the effective passivation of surface defects, and an enhancement in carrier lifetime. Furthermore, the heterostructure growth of ZnSe domains leads to significant improvement in the stability of the CsPbI 3 nanocrystals under ambient conditions and against thermal and UV irradiation stress., (© 2024 The Author(s). Small published by Wiley‐VCH GmbH.)