Search

Phase change materials (PCMs) are used to cool high-power-density electronic devices because of their high latent heat and chemical stability. However, their low thermal conductivity limits the application of PCMs. To solve this problem, a double-porosity porous aluminum skeleton/paraffin phase change materials (DPAS/PCM) was prepared via additive manufacturing and the water-bath method. The thermal performance of the DPAS/PCM heat sink (HS) was experimentally investigated to examine the effects of the positive- and reverse-gradient porosity structures of the DPAS/PCM. The results show that a positive-gradient porosity arrangement is more conducive to achieving a low-temperature cooling target for LED operation. In particular, the temperature control time for the positive gradient porosity structure increased by 4.6–13.7% compared with the reverse gradient porosity structure. Additionally, the thermal performances of uniform porous aluminum skeleton/paraffin (UAS) and DPAS/PCMs were investigated. The temperature control effect of the DPAS/PCM was better than that of the UAS/PCM HS at high critical temperatures. Compared with the UAS/PCM HS, the temperature control time of the DPAS/PCM HS is increased by 7.8–12.5%. The results of this work show that the prepared DPAS/PCM is a high-potential hybrid system for thermal management of high-power electronic devices. [ABSTRACT FROM AUTHOR]

Broad-area lasers (BALs) have found applications in a variety of crucial fields on account of their high output power and high energy transfer efficiency. However, they suffer from poor spatial beam quality due to multi-mode behavior along the waveguide transverse direction. In this paper, we propose a novel metasurface waveguide structure acting as a transverse mode selective back-reflector for BALs. In order to effectively inverse design such a structure, a digital adjoint algorithm is introduced to adapt the considerably large design area and the high degree of freedom. As a proof of the concept, a device structure with a design area of 40 × 20 μm2 is investigated. The simulation results exhibit high fundamental mode reflection (above 90%), while higher-order transverse mode reflections are suppressed below 0.2%. This is, to our knowledge, the largest device structure designed based on the inverse method. We exploited such a device and the method and further investigated the device's robustness and feasibility of the inverse method. The results are elaborately discussed. [ABSTRACT FROM AUTHOR]