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Urban Particulate Matter (UPM) induces skin aging and inflammatory responses by regulating skin cells through the transient receptor potential vanilloid 1 (TRPV1). Although oleic acid, an unsaturated free fatty acid (FFA), has some functional activities, its effect on UPM‐induced skin damage has not been elucidated. Here, we investigated signaling pathways on how oleic acid is involved in attenuating UPM induced cell damage. UPM treatment increased XRE‐promoter luciferase activity and increased translocation of AhR to the nucleus, resulting in the upregulation of CYP1A1 gene. However, oleic acid treatment attenuated the UPM effects on AhR signaling. Furthermore, while UPM induced activation of TRPV1 and MAPKs signaling which activated the downstream molecules NFκB and AP‐1, these effects were reduced by cotreatment with oleic acid. UPM‐dependent generation of reactive oxygen species (ROS) and reduction of cellular proliferation were also attenuated by the treatment of oleic acid. These data reveal that cell damage induced by UPM treatment occurs through AhR signaling and TRPV1 activation which in turn activates ERK and JNK, ultimately inducing NFκB and AP‐1 activation. These effects were reduced by the cotreatment of oleic acid on HaCaT cells. These suggest that oleic acid reduces UPM‐induced cell damage through inhibiting both the AhR signaling and activation of TRPV1 and its downstream molecules, leading to a reduction of pro‐inflammatory cytokine and recovery of cell proliferation. [ABSTRACT FROM AUTHOR]

This study implements a highly uniform 3D vertically stack resistive random‐access memory (VRRAM) with a four‐layer contact hole structure. The fabrication process of a four‐layer VRRAM is demonstrated, and its physical and electrical properties are thoroughly examined. X‐ray photoelectron spectroscopy and transmission electron microscopy are employed to analyze the chemical distribution and physical structure of the VRRAM device. Multilevel capability, reliable endurance (>104 cycles), and retention (104 s) are successfully obtained. Synaptic memory plasticity, such as spike time‐dependent plasticity, spike rate‐dependent plasticity, excitatory post‐synaptic current, paired‐pulse facilitation, and long‐term potentiation and depression is presented. Finally, the vector‐matrix multiplication (VMM) operation is conducted on a 4 × 12 VRRAM array, according to the low resistance state ratio. It is ascertained that the accuracy drop, which can occur due to VMM error, can be limited to a decrease of less than 0.44% point. Utilizing the high‐density, multilevel, and biological characteristics of VRRAM, it is possible to implement high‐performance neuromorphic systems that require densely integrated synaptic devices. [ABSTRACT FROM AUTHOR]