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In this work, the planar and ridge waveguides on the Er3+-doped germanate glass were fabricated by the oxygen-ion implantation with the energy of 6.0 MeV and the fluence of 5 × 1014 ions/cm2 and the femtosecond laser ablation with a pulse energy of 3.0 μJ and a scanning speed of 50.0 μm/s. The waveguides were characterized by the m-line setup and the near-field pattern. The formation theory of the planar waveguide was discussed through simulating the energy loss distribution and analyzing the reconstructed refractive index profile. The ion implantation results in a higher-refractive-index layer with a thickness of around 4.8 μm to guide light as a waveguide core and the femtosecond laser ablation leads to two air grooves as claddings in the Er3+-doped germanate glass. It is the first report of the O3+-implanted Er3+-doped germanate glass planar waveguide, to the best of our knowledge. Furthermore, the structural parameters of the O3+-implanted and fs-laser ablated Er3+-doped germanate glass ridge waveguide have been optimized, compared with the previous work. The planar and ridge waveguides could be used for applications in future integrated optical systems. [ABSTRACT FROM AUTHOR]

The high-quality waveguide structure in the Dy 3 + -doped Y3Al5O 1 2 transparent ceramic is of significance for the application of integrated micro-light elements. However, there have been no reports on the preparation of optical waveguides by ion implantation in the Dy 3 + -doped Y3Al5O 1 2 transparent ceramic. The work reports on the formation of optical planar waveguides by using the proton implantation in the Dy 3 + -doped Y3Al5O 1 2 transparent ceramic. The acceleration energy and the dose of the protons are 400 keV and 8 × 1 0 1 6 ions/cm2, respectively. The structure of the fabricated waveguide is captured with the high-res/mag images by a metallurgical microscope. The dark-mode spectrum and the refractive index distribution are gained by the prism coupling system and the RCM software, respectively. The measurement and simulation of the near-field intensity distribution indicate the propagation of light field in the waveguide. The results are of potential to the compact devices in the photonics. [ABSTRACT FROM AUTHOR]

An ion implanter was used to irradiate protons with a dose of 8×1016 ions/cm2 and an energy of 400 keV into a Ce3+:GGG crystal. To our knowledge, this is the first time that ion implantation was applied to a Ce3+:GGG crystal. The penetration depth was determined by the stopping and range of ions in matter simulation. The prism coupling method was utilized to evaluate the propagation modes in the H+-implanted waveguide. The end-face coupling method and the finite-difference beam propagation were employed for the analysis of the waveguide performance. The refractive index distribution was reconstructed by the reflectivity calculation method. The main significance of the investigation is to confirm the potential of the ion-irradiated Ce3+:GGG crystals for fabricating waveguide structures and devices. [ABSTRACT FROM AUTHOR]