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Abstract This study introduces a strategy for the pre‐allocation and dispatch of mobile power sources (MPSs) within a power‐transportation coupled network, targeting efficient distribution network fault recovery under extreme weather conditions. The strategy incorporates the Dijkstra algorithm and blind number theory to analyse the MPS driving path and generate fault scenarios respectively, considering the effects of extreme weather on traffic capacity and distribution network fault rate. The MPS pre‐allocation model, formulated to minimize the load outage loss, MPS investment, and driving fuel cost, provides a foundation for optimization of the dispatch process. The dispatch optimization model adapts to dynamic information from the power‐transportation coupled network to make decisions on load restoration sequencing and MPS driving path. The effectiveness of the proposed strategy is demonstrated through an application to the IEEE 33‐node distribution system and a corresponding 33‐node transportation network.

With the ever-increasing scale of power systems, stability analysis and control usually bear heavy storage and massive calculation burdens. In view of this, the model order reduction technique proves valuable by constructing a low-dimensional approximate model of the original system, which is crucial for efficiently handling large-scale systems. Balanced truncation (BT), a famous model reduction method, confronts practical limitations as it requires the systems to be stable and cannot deal with unstable models. Therefore, a parallel linear balanced truncation method for power systems based on extended Krylov subspace (EKS) is proposed in this work. Besides extending the BT method to unstable systems by α-shift, the key contribution also lies in strategies to enhance the convergence of the EKS method, whereupon the algorithm improvements include effective and efficient techniques for solving dual Lyapunov equations, and parallel acceleration of the singular value decomposition. The results of the simulation case verify that the proposed method can effectively improve the convergence of the EKS method by increasing α-shift, and the improvement work in this paper reduces the total time consumption of the BT method by about 26 %–33 % of the original, exhibiting better calculation efficiency. In addition, the case studies show that the simplified model still retains the time-domain and frequency-domain response characteristics of the original high-dimensional model.

In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

In this manuscript, we present a novel deployment protection method aimed at safeguarding aeronautical radio altimeters (RAs) from interference caused by fifth-generation (5G) telecommunication base stations (BSs). Our methodology involves an integrated interference model for defining prohibited zones and utilizes power control and angle shutoff methods to mitigate interference. First, to ensure reliable protection, we define both horizontal and vertical prohibited zones and investigate their variations to immunize RA against 5G interference. Second, we validate the effectiveness of the model in various operational scenarios, analyzing the influence of factors such as base station types, antenna parameters, flight altitude, and aircraft attitudes to cover a wide range of real-world scenarios. Third, to mitigate interference, we propose and analyze the power control and angle shutoff methods through simulation for the RMa prohibited zone. Our results demonstrate the efficacy of the deployment protection method in safeguarding RAs from 5G interference, providing guidance for interference protection during civil aviation operations and base station deployment near airports.