Search

Bismuth vanadate (BiVO4) as a fascinating semiconductor for photoelectrocatalytic (PEC) water oxidation with suitable band gap (Eg) has been limited by the issue of poor separation and transportation of charge carriers. Herein, we propose an unconventional substitution of V5+sites by Ti4+in BiVO4(Ti:BiVO4) for the similar ionic radii and accelerated polaron hopping. Ti:BiVO4increased the photocurrent density 1.90 times up to 2.51 mA cm–2at 1.23 V vs RHE and increased the charge carrier density 1.81 times to 5.86 × 1018cm–3. Compared with bare BiVO4, Ti:BiVO4improves the bulk separation efficiency to 88.3% at 1.23 V vs RHE. The DFT calculations have illustrated that Ti-doping modification could decrease the polaron hopping energy barrier, narrow the Eg, and decrease the overpotential of the oxygen evolution reaction (OER) concurrently. With further spin-coated FeOOH cocatalyst, the photoanode has a photocurrent density of 3.99 mA cm–2at 1.23 V vs RHE. The excellent PEC performance of FeOOH/Ti:BiVO4is attributed to the synergistic effect of the FeOOH layer and Ti doping, which could promote charge carrier separation and transfer by expediting polaron migration.