1. Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target.
- Author
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Yang, Ke, Li, Bing, Zhang, Jingquan, Li, Wei, Wu, Lili, Zeng, Guanggen, Wang, Wenwu, Liu, Cai, and Feng, Lianghuan
- Subjects
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THIN films , *ALUMINUM antimonide , *OPTICAL properties , *ELECTRIC properties , *PULSED laser deposition , *ALLOYS , *SOLAR cells - Abstract
AlSb films which are a promising absorber layer for thin film solar cells were grown on glass substrate at different substrate temperature ranging from room temperature to 400 °C on glass substrates using aluminum-antimony alloying target by pulsed laser deposition (PLD) technique. Structural, optical and electrical properties of AlSb thin films were studied by X-ray diffraction (XRD), ultraviolet–visible spectrophotometer and a home-made four-probe-contact high temperature system respectively. XRD pattern shows that AlSb film is amorphous at room temperature, but when substrate temperature is higher than 100 °C, AlSb films present cubic phase structure with the preferential orientation of (111) plane. And intensity of diffraction peaks of AlSb film prepared at substrate temperature of 200 °C are stronger than that of other substrate temperature. The electrical measurement results show that conductivity activation energy of AlSb film is 0.25 eV and 0.28 eV. The indirect optical band gap is about 1.63 eV, which is very close to its theoretical value of 1.62 eV. The results of energy dispersive spectrometer (EDS) indicated the ratio of Al to Sb of AlSb films is about 1:1. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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