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This work reports on theoretical studies on the GaInNAs material properties (bandgap, lattice mismatch, absorption coefficient) as grown on GaAs substrate. The Band Anti-Crossing (BAC) k ⋅ p 8 × 8 model has been used to determine the influence of indium and nitrogen concentrations on the position of conduction and valence bands. The incorporation of nitrogen at a level lower than 5% causes the split of the conduction band. For indium and nitrogen concentrations of 38% and 3.5%, respectively, the strained bandgap energy is 0.70 eV and the absorption coefficient of indium and nitrogen-rich compounds increases significantly. [ABSTRACT FROM AUTHOR]