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This work focuses on the modeling and optimization of a structure based on InGaP/InGaAs/InGaAsN/Ge for photovoltaic. In this study we took into consideration the concentration effect of alloys x (In) and y (N) on the strain, the bandgap, the absorption and structure efficiency. It has been shown that the concentration of indium varies the strain and the bandgap. These two parameters change considerably the yield. Also it optimized the effect of alloys on the total absorption of the structure. For a concentration of indium x = 0.40 and y = 0.03 we had a absorption coefficient which is equal to 2 × 10 6 cm −1 . We have found 50% efficiency for the multi-junction structure based on In 0.55 Ga 0.45 P/In 0.40 Ga 0.60 As/In 0.30 Ga 0.70 As 0.97 N 0.03 /Ge. To achieve a reliable high efficiency multi-junction structure, we just need to optimize the concentrations of different alloys. [ABSTRACT FROM AUTHOR]

This work reports on theoretical studies on the GaInNAs material properties (bandgap, lattice mismatch, absorption coefficient) as grown on GaAs substrate. The Band Anti-Crossing (BAC) k ⋅ p 8 × 8 model has been used to determine the influence of indium and nitrogen concentrations on the position of conduction and valence bands. The incorporation of nitrogen at a level lower than 5% causes the split of the conduction band. For indium and nitrogen concentrations of 38% and 3.5%, respectively, the strained bandgap energy is 0.70 eV and the absorption coefficient of indium and nitrogen-rich compounds increases significantly. [ABSTRACT FROM AUTHOR]