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As a light absorber in photovoltaic applications, hybrid organic-inorganic halide perovskites should have long and balanced diffusion lengths for both the separated electrons and holes before recombination, which necessitates high carrier mobility. In polar semiconductors, the room-temperature carrier mobility is often limited by the scattering between carriers and the lowest-frequency optical phonon modes. Using terahertz time-domain spectroscopy, we examine the temperature evolution of these phonon modes in CH3NH3PbBr3 and obtained high carrier mobility values using Feynman's polaron theory. This method allows us to estimate the upper limit of carrier mobilities without the need to create photogenerated free carriers, and can be applied to other heteropolar semiconductor systems with large polarons. MOE (Min. of Education, S’pore) Published version

Cataloged from PDF version of article. We report first-principles calculations on the binding of poly[(9,9-bis-(6-bromohexylfluorene-2,7-diyl)-co-(benzene-1,4-diyl)] to a (8,0) single wall carbon nanotube (SWCNT) and to graphene. Considering different relative orientations of the subsystems, we find for the generalized gradient approximation a non-binding state, whereas the local density approximation predicts reasonable binding energies. The results coincide after inclusion of van der Waals corrections, which demonstrates a weak interaction between the polymer and SWCNT/graphene, mostly of van der Waals type. Accordingly, the density of states shows essentially no hybridization. The physisorption mechanism explains recent experimental observations and suggests that the conjugated polymer can be used for non-covalent functionalization. (C) 2014 AIP Publishing LLC.

Polymer diodes require cathodes that do not corrode the polymer but do have low work function to minimize the electron injection barrier. First-principles calculations demonstrate that the work function of the (1000) surface of the compound Ca2N is half an eV lower than that of the elemental metal Ca (2.35 vs. 2.87 eV). Moreover its reactivity is expected to be smaller. This makes Ca2N an interesting candidate to replace calcium as cathode material for polymer light emitting diode devices., Comment: 3 pages, 4 figures, accepted by J. Appl. Phys

The application of oxide buffer layers for improved carrier extraction is ubiquitous in organic electronics. However, the performance is highly susceptible to processing conditions. Notably, the interface stability and electronic structure is extremely sensitive to the uptake of ambient water. In this study we use density functional theory calculations to asses the effects of adsorbed water on the electronic structure of MoOx, in the context of polymer-fullerene solar cells based on PCDTBT. We obtain excellent agreement with experimental values of the ionization potential for pristine MoO3 (010). We find that IP and EA values can vary by as much as 2.5 eV depending on the oxidation state of the surface and that adsorbed water can either increase or decrease the IP and EA depending on the concentration of surface water.

Modification of ceria catalysts is of great interest for oxidation reactions such as oxidative dehydrogenation of alcohols. Improving the reactivity of ceria based catalysts for these reactions means that they can be run at lower temperatures and density functional theory (DFT) simulations of new structures and compositions are proving valuable in the development of these catalysts. In this paper, we have used DFT+U (DFT corrected for on-site Coulomb interactions) to examine the reactivity of a novel modification of ceria, namely, modifying with TiO2, using the example of a Ti2O4 species adsorbed on the ceria (111) surface. The oxygen vacancy formation energy in the Ti2O4–CeO2 system is significantly reduced over the bare ceria surfaces, which together with previous work on ceria-titania indicates that the presence of the interface favours oxygen vacancy formation. The energy gain upon hydrogenation of the catalyst, which is the rate determining step in oxidative dehydrogenation, further points to the improved oxidation power of this catalyst structure.

The NO dissociation on a series of doped gold surfaces (type TMn@Au(111) or TMn@Au(110), with TMn = Ni, Ir, Rh, or Ag and referring n to the number of dopant atoms per unit cell) was investigated through periodic density functional theory calculations. Generally, doping of Au(111) and Au(110) matrices was found to strengthen the interaction with NO species, with the exception of Ag, and was found to increase the energy barrier for dissociation, with the exception of Ni on Au(111). The calculations suggest that the NO dissociation is only possible in the case of the Ir@Au(110) bimetallic surface but only at high temperatures. The increase of the contents of Ir on Au(110) was found to improve significantly the catalytic activity of gold towards the NO dissociation (E-act = similar to 1 eV). Nevertheless, this energy barrier is almost the double of that calculated for NO dissociation on pure Ir(110). However, mixing the two most interesting dopant atoms resulted in a catalyst model of the type Ir@Ni(110) that was found to decrease the energy barrier to values close to those calculated for pure Ir surfaces, i.e., similar to 0.4 eV, and at the same time the dissociation reaction became mildly exothermic. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790602]

Atomic-scale models of the abrupt high-k/Ge interface with a range of suboxide stoichiometries GeO(x) are presented and compared to their Si analogs. Molecular dynamics and geometry optimization were carried out at the density functional theory level to yield structures and energetics. Cohesion across the interface becomes stronger with increasing oxidation of the Ge suboxide. Three-coordinate Ge is identified as the main defect and is formed at low energetic cost, which accounts for the observed abundance of defects at oxide/Ge interfaces. The optimum low temperature interface is defect-free, predominantly Ge(2+) with some Ge(+). (C) 2011 American Institute of Physics. (doi:10.1063/1.3554703)

Ab initio calculations of clusters in Ge, up to three-impurity atoms in substitutional and/or interstitial sites, are discussed. Interstitial defects, with usually high formation energies when isolated, are stabilized thanks to the interaction with substitutional sites nearby. Mn impurities show a tendency to cluster and magnetic alignment strongly dependent on the sites; however, the occurrence of some Mn clusters is seen not to degrade magnetism, though reducing the total magnetic moment. Cr codoping leads to large formation energy and antiferromagnetic alignment. Co codoping lowers the energy cost of Mn incorporation without disrupting ferromagnetic ordering, thus representing a possible route to help Mn incorporation in Ge. (c) 2006 American Institute of Physics.

Half-metals are defined by an electronic structure, which shows conduction by charge carriers of one spin direction exclusively. Consequently, the spin polarization of the conduction electrons should be 100%. In reality this complete spin polarization is not always observed. Since the experimental search for half-metals is tedious and the verification of the expected spin polarization is involved, electronic structure calculations have played an important role in this area. So, an important question is, how the approximations in such calculations influence the resulting spin polarization of the conduction. Another aspect is the well-known fact that bulk properties can be very different from surface and interface properties. Indeed, measurements of the spin polarization in the bulk for, e.g., NiMnSb, show results different from surface sensitive measurements. In this respect it is important to realize that the origin of half-metallic behavior is not unique. Consequently, the deviations from the bulk behavior at the surface/interface can be important. Three different categories of half-metals can be distinguished and their expected surface properties will be discussed. Finally, ways will be described to control the properties at interfaces.