1. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon
- Author
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Muhammad Mustafa Hussain, G. A. Torres Sevilla, Abdurrahman Gumus, Melvin E. Cruz, Amani S. Almuslem, and Aftab M. Hussain
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,Hybrid silicon laser ,chemistry.chemical_element ,Nanotechnology ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,01 natural sciences ,law.invention ,Hardware_GENERAL ,law ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Electronics ,Reactive-ion etching ,Metal gate ,010302 applied physics ,business.industry ,Transistor ,021001 nanoscience & nanotechnology ,chemistry ,CMOS ,Optoelectronics ,Wafer dicing ,0210 nano-technology ,business - Abstract
Thinned silicon based complementary metal oxide semiconductor (CMOS) electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOS inverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible silicon CMOS inverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain full...
- Published
- 2016
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