1. Composition of Ge(Si) islands in the growth of Ge on Si(111)
- Author
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Anna Sgarlata, Pierre-David Szkutnik, Nunzio Motta, Maurizio De Crescenzi, Stefano Fontana, Fulvio Ratto, Salia Cherifi, Stefan Heun, Andrea Locatelli, and Federico Rosei
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,SURFACES ,Analytical chemistry ,chemistry.chemical_element ,MICROSCOPY ,Germanium ,QUANTUM DOTS ,GE/SI(100) ISLANDS ,NANOSTRUCTURES ,SI(001) ,SUBSTRATE ,EVOLUTION ,STATES ,Atmospheric temperature range ,Electron spectroscopy ,Settore FIS/03 - Fisica della Materia ,Photoemission electron microscopy ,chemistry ,Molecular beam epitaxial growth ,Composition (visual arts) ,Chemical composition - Abstract
X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460–560 °C. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%–20%, whereas it grows up to 30%–40% for “atoll-like” structures. The island’s stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si.
- Published
- 2004